Ordering number : ENA1348A PCP1203 Bipolar Transistor PCP1203 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I 300 mA B 2 When mounted on ceramic substrate (450mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =30V, I =0A 0.1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 0.1 A EBO EB C DC Current Gain h V =2V, I =100mA 200 560 FE CE C Gain-Bandwidth Product f V =10V, I =300mA 500 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 8 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =0.75A, I =15mA 150 225 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =0.75A, I =15mA 0.85 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 40 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10 A, I =0A 5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. 205 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=50s D.C.1% OUTPUT I B2 INPUT R B R L 50 + 820F V =12V CC I =20I = --20I =0.75A C B1 B2 Ordering Information Device Package Shipping memo PCP1203-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C BE 2.0 1.6 V =2V CE 1.8 1.4 1.6 1.2 1.4 1.0 1.2 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 I =0mA B 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, V -- V IT14121 Base-to-Emitter Voltage, V -- V IT14122 CE BE No.A1348-2/7 2mA 10mA 4mA 6mA 30mA 20mA 8mA 40mA 50mA Ta=75C 25C --25C Collector Current, I -- A C Collector Current, I -- A C