RB520S30T1G, RB520S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for highspeed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature www.onsemi.com surface mount package is excellent for handheld and portable applications where space is limited. Features 30 VOLT SCHOTTKY BARRIER DIODE Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) I = 200 mA F Low Reverse Current ESD Rating: Class 3B per Human Body Model 1 2 Class C per Machine Model CATHODE ANODE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 MAXIMUM RATINGS 1 Rating Symbol Value Unit SOD523 Reverse Voltage V 30 Vdc R CASE 502 Forward Current DC I 200 mA F Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MARKING DIAGRAM assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS 5J M Characteristic Symbol Max Unit 12 Total Device Dissipation FR5 Board, P 200 mW D (Note 1) T = 25C A 5J = Device Code Derate above 25C 1.57 mW/C M = Date Code* Thermal Resistance, JunctiontoAmbient 635 C/W R JA = PbFree Package (Note: Microdot may be in either location) Junction and Storage Temperature Range T , T 55 to +150 C J stg *Date Code orientation position may vary depending NonRepetitive Peak Forward I 600 mA FSM upon manufacturing location. Current, t < 10 msec p Repetitive Peak Forward Current I 300 mA FRM Pulse Wave = 1 sec, Duty Cycle = 66% ORDERING INFORMATION Thermal Resistance, R 635 C/W JA Device Package Shipping JunctiontoAmbient RB520S30T1G SOD523 4 mm Pitch 1. FR5 Minimum Pad. (PbFree) 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A RB520S30T5G SOD523 2 mm Pitch Characteristic Symbol Min Typ Max Unit (PbFree) 8000/Tape & Reel Reverse Leakage I 1.0 A R (V = 10 V) R For information on tape and reel specifications, including part orientation and tape sizes, please Forward Voltage V 0.60 Vdc F refer to our Tape and Reel Packaging Specifications (I = 200 mA) F Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2017 Rev. 11 RB520S30T1/DRB520S30T1G, RB520S30T5G 820 +10 V 2 k 0.1 F I F t t t p I F 100 H r t t 10% 0.1 F rr DUT 90% 50 Output 50 Input i = 1 mA Pulse Sampling R(REC) I R Generator Oscilloscope V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 200 1000 T = 150C A 100 100 T = 125C A 1 50C 10 10 1.0 T = 85C A 1 25C 0.1 1.0 85C 25C 0.01 40C 55C T = 25C A 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 510 15 20 25 30 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 25 14 Based on square wave currents T = 25C prior to surge 12 J 20 10 15 8 6 10 4 5 2 0 0 0 510 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 t , PULSE ON TIME (ms) V , REVERSE VOLTAGE (VOLTS) P R Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 2 C , TOTAL CAPACITANCE (pF) T I , FORWARD CURRENT (mA) F I , REVERSE CURRENT ( A) I , FORWARD SURGE MAX CURRENT (A) R FSM