Surface Mount Schottky Power Rectifier MBRS120T3G, SBRS8120T3G, SBRS8120N This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features www.onsemi.com epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or SCHOTTKY BARRIER as free wheeling and polarity protection diodes in surface mount RECTIFIER applications where compact size and weight are critical to the system. 1.0 AMPERE, 20 VOLTS Features Small Compact Surface Mountable Package with JBend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction SMB Very Low Forward Voltage Drop (0.55 Volts Max 1.0 A, T = 25C) J CASE 403A Excellent Ability to Withstand Reverse Avalanche Energy Transients GuardRing for Stress Protection MARKING DIAGRAM ESD Ratings: Human Body Model = 3B (> 16000 V) AYWW Machine Model = C (> 400 V) B12 SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* B12 = Specific Device Code These are PbFree Devices A = Assembly Location** Y = Year Mechanical Characteristics WW = Work Week Case: Epoxy, Molded = PbFree Package Weight: 95 mg (Approximately) (Note: Microdot may be in either location) Finish: All External Surfaces Corrosion Resistant and Terminal **The Assembly Location code (A) is front side Leads are Readily Solderable optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), Lead and Mounting Surface Temperature for Soldering Purposes: the front side assembly code may be blank. 260C Max. for 10 Seconds Cathode Polarity Band ORDERING INFORMATION Device Package Shipping MBRS120T3G SMB 2 500 / (PbFree) Tape & Reel SBRS8120T3G* SMB 2 500 / (PbFree) Tape & Reel SBRS8120NT3G* SMB 2 500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: December, 2019 Rev. 9 MBRS120T3/DMBRS120T3G, SBRS8120T3G, SBRS8120N MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 115C) 1.0 L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature T 65 to +125 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoLead R C/W JL (T = 25C) 12 L ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) V V F (i = 1.0 A, T = 25C) 0.6 F J Maximum Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 25C) 1.0 J (Rated dc Voltage, T = 100C) 10 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 100 50 1 30 T = 100C T = 125C C J 20 0.7 10 0.5 100C 5 3 0.3 2 75C 0.2 1 0.5 0.1 0.3 0.2 25C 0.07 T = 25C C 0.1 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 4 8 12 1620 2428 32 3640 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F I , REVERSE CURRENT (mA) R