NJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for highgain audio amplifier applications.
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Features
High DC Current Gain SILICON
Low CollectorEmitter Saturation Voltage
POWER TRANSISTORS
High CurrentGain Bandwidth Product
2 AMPERES
Epoxy Meets UL 94 V0 @ 0.125 in
50 VOLTS
NJV Prefix for Automotive and Other Applications Requiring
15 WATTS
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
COLLECTOR
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
2,4
Compliant
1
MAXIMUM RATINGS
BASE
Rating Symbol Value Unit
3
CollectorBase Voltage V 50 Vdc
CB
EMITTER
CollectorEmitter Voltage V 50 Vdc
CEO
EmitterBase Voltage V 5 Vdc
EB 4
Collector Current Continuous I 2 Adc
C
1
2
Collector Current Peak I 3 Adc
CM
3
Base Current I 0.4 Adc
B DPAK
CASE 369C
Total Device Dissipation P
D
STYLE 1
@ T = 25C 15 W
C
Derate above 25C 0.1 W/C
MARKING DIAGRAM
Total Device Dissipation P
D
@ T = 25C* 1.68 W
A
Derate above 25C 0.011 W/C
AYWW
J
Operating and Storage Junction T , T 65 to +175 C
J stg
Temperature Range
2873G
ESD Human Body Model HBM 3B V
A = Assembly Location
ESD Machine Model MM C V
Y = Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
WW = Work Week
device. If any of these limits are exceeded, device functionality should not be
G = PbFree Device
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
NJD2873T4G DPAK 2,500
(PbFree) Units / Reel
NJVNJD2873T4G DPAK 2,500
(PbFree) Units / Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2017
1 Publication Order Number:
January, 2017 Rev. 18 NJD2873T4/DNJD2873
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance C/W
JunctiontoCase R 10
JC
JunctiontoAmbient (Note 1) R 89.3
JA
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2) V Vdc
CEO(sus)
(I = 10 mAdc, I = 0) 50
C B
Collector Cutoff Current I nAdc
CBO
(V = 50 Vdc, I = 0) 100
CB E
Emitter Cutoff Current (V = 5 Vdc, I = 0) I 100 nAdc
BE C EBO
ON CHARACTERISTICS
DC Current Gain (Note 2) h
FE
(I = 0.5 A, V = 2 V)
C CE 120 360
(I = 2 Adc, V = 2 Vdc)
C CE 40
(I = 0.75 Adc, V = 1.6 Vdc, 40C T 150C)
C CE J 80 360
CollectorEmitter Saturation Voltage (Note 2) V Vdc
CE(sat)
(I = 1 A, I = 0.05 A)
C B 0.3
BaseEmitter Saturation Voltage (Note 2) (I = 1 A, I = 0.05 Adc) V 1.2 Vdc
C B BE(sat)
BaseEmitter On Voltage (Note 2) V Vdc
BE(on)
(I = 1 Adc, V = 2 Vdc) 1.2
C CE
(I = 0.75 Adc, V = 1.6 Vdc, 40C T 150C) 0.95
C CE J
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3) f MHz
T
(I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 65
C CE test
Output Capacitance C pF
ob
(V = 10 Vdc, I = 0, f = 0.1 MHz) 80
CB E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.
3. f = h f .
T fe test
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2