Schottky Power Rectifier Surface Mount Power Package MBRS130LT3G, SBRS8130LT3G, SBRS8130LN www.onsemi.com This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay SCHOTTKY BARRIER contact. Ideally suited for low voltage, high frequency rectification, RECTIFIER or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the 1.0 AMPERE system. 30 VOLTS Features Very Low Forward Voltage Drop (0.395 Volts Max 1.0 A, T = 25C) J Small Compact Surface Mountable Package with JBend Leads Highly Stable Oxide Passivated Junction SMB GuardRing for Stress Protection CASE 403A ESD Ratings: Human Body Model = 3B (> 16000 V) MARKING DIAGRAM Machine Model = C (> 400 V) SBRS8 Prefix for Automotive and Other Applications Requiring AYWW Unique Site and Control Change Requirements AECQ101 1BL3 Qualified and PPAP Capable* These are PbFree Devices 1BL3 = Specific Device Code Mechanical Characteristics A = Assembly Location** Case: Epoxy, Molded Y = Year Weight: 100 mg (approximately) WW = Work Week = PbFree Package Finish: All External Surfaces Corrosion Resistant and Terminal (Note: Microdot may be in either location) Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is 260C Max. for 10 Seconds stamped in the package bottom (molding ejecter pin), Cathode Polarity Band the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping MBRS130LT3G SMB 2,500 / (PbFree) Tape & Reel SBRS8130LT3G* SMB 2,500 / (PbFree) Tape & Reel SMB 2,500 / SBRS8130LT3GVF01* (PbFree) Tape & Reel SBRS8130LNT3G* SMB 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: December, 2019 Rev. 11 MBRS130LT3/DMBRS130LT3G, SBRS8130LT3G, SBRS8130LN MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) T = 120C 1.0 L T = 110C 2.0 L NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature T 65 to +125 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JL JunctiontoLead 12 Thermal Resistance, R C/W JA JunctiontoAmbient (T = 25C, Min Pad, 1 oz copper) 228.8 A JunctiontoAmbient (T = 25C, 1 Pad, 1 oz copper) 71.3 A ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) V V F (i = 1.0 A, T = 25C) 0.395 F J (i = 2.0 A, T = 25C) 0.445 F J Maximum Instantaneous Reverse Current (Note 1) I mA R (Rated dc Voltage, T = 25C) 1.0 J (Rated dc Voltage, T = 100C) 10 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 10 10 T = 100C J T = 100C J 1 1 25C 25C 0.1 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V , INSTANTANEOUS VOLTAGE (V) V , MAXIMUM INSTANTANEOUS VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 I , INSTANTANEOUS FORWARD CURRENT F (A) I , MAXIMUM INSTANTANEOUS FORWARD F CURRENT (A)