SNSS30201MR6T1G ON Semiconductor

NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) NSS30201MR6T1G, SNSS30201MR6T1G MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 30 V CEO Collector-Base Voltage V 50 V CBO Emitter-Base Voltage V 5.0 V EBO Collector Current Continuous I 2.0 A C Collector Current Peak I 3.0 A CM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 535 mW A Derate above 25C 4.3 mW/C Thermal Resistance, R (Note 1) C/W JA Junction toAmbient 234 Total Device Dissipation P (Note 2) D T = 25C 1.180 W A Derate above 25C 9.4 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 106 Thermal Resistance, R (Note 1) 110 C/W JL JunctiontoLead 1 R (Note 2) 50 C/W JL Total Device Dissipation P W Dsingle (Single Pulse < 10 s) (Notes 2 and 3) 1.75 Junction and Storage Temperature Range T , T 55 to +150 C J stg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 1. FR 4 with 1 oz and 3.9 mm of copper area. 2 2. FR 4 with 1 oz and 645 mm of copper area. 3. Refer to Figure 8.