SSESD11B ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD11B Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that www.onsemi.com are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. Specification Features Low Capacitance 12 pF Low Clamping Voltage MARKING DIAGRAM Small Body Outline Dimensions: 0.60 mm x 0.30 mm Low Body Height: 0.3 mm DSN2 Standoff Voltage: 5.0 V A CASE 152AS Low Leakage SCALE 8:1 Response Time is < 1 ns A = Specific Device Code IEC6100042 Level 4 ESD Protection IEC6100044 Level 4 EFT Protection These Devices are PbFree, Halogen Free/BFR Free and are RoHS ORDERING INFORMATION Compliant Device Package Shipping Mechanical Characteristics SSESD11B5.0ST5G DSN2 5000 / Tape & MOUNTING POSITION: Any (PbFree) Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C For information on tape and reel specifications, Device Meets MSL 3 Requirements including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MAXIMUM RATINGS Rating Symbol Value Unit IEC 6100042 (ESD) Contact 15 kV Air 15 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 40 to +125 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Peak Pulse Current, 8 x 20 s double I 2.0 A pp exponential waveform (Figure 5) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2017 Rev. 2 SSESD11B/DSSESD11B ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V I ( A) V (V) I V (V) RWM BR T C R (V) V (Note 2) I C (pF) 1 A V RWM T C Device Max Per IEC6100042 (Note 3) (Note 4) Marking Max Max Min mA Typ Max Device SSESD11B5.0ST5G 11B5 5.0 1.0 5.8 1.0 12 13.5 10 Figures 1 and 2 See Below Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveforms per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2