SSR1N60BTM-WS / SSU1N60BTU-WS N-Channel MOSFET SSR1N60BTM -WS / SSU1N60BTU-WS N-Channel MOSFET 600 V, 0.9 A, 12 Description Features These N-Channel enhancement mode power field effect transis- 0.9A, 600V, R = 12 V = 10 V DS(on) GS tors are produced using ON Semiconductors proprietary, Low gate charge ( typical 5.9 nC) planar, DMOS technology. Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- Fast switching mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switch mode power supplies. 4 D 2, 4 4 1 2 1 G 1 3 D-PAK I-PAK 2 SSR Series SSU Series 3 S 3 o MOSFET Maximum Ratings T = 25 C unless otherwise noted C SSR1N60BTM -WS / Symbol Parameter Unit SSU1N60BTU -WS V Drain-Source Voltage 600 V DSS o Drain Current - Continuous (T = 25 C) 0.9 C I A D o - Continuous (T = 100 C) 0.57 C I Drain Current - Pulsed (Note 1) 3.0 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 50 mJ AS I Avalanche Current (Note 1) 0.9 A AR E Repetitive Avalanche Energy (Note 1) 2.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25C) * 2.5 W A o P 28 W Power Dissipation (T = 25 C) D C o o - Derate above 25 C 0.22 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, o T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit Typ Max R Thermal Resistance, Junction-to-Case - 4.53 C/W JC R Thermal Resistance, Junction-to-Ambient * - 50 C/W JA R Thermal Resistance, Junction-to-Ambient - 110 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2001 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 2 SSR1N60BTM-WS/DSSR1N60BTM-WS / SSU1N60BTU-S N-Channel MOSFET o Electrical Characteristics T = 25 C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics V = 0 V, I = 250 A 600 BV Drain to Source Breakdown Voltage -- V GS D DSS BV Breakdown Voltage Temperature DSS o I = 250 A, Referenced to 25C -0.65 - V/ C D / T Coefficient J V = 600 V, V = 0 V -- 10 A DS GS I Zero Gate Voltage Drain Current DSS V = 480 V, T = 125C -- 100 A DS C I V = 30 V, V = 0 V Gate-Body Leakage Current, Forward 100 nA GSSF GS DS I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -100 nA GSSR GS DS On Characteristics V = V , I = 250 A V Gate Threshold Voltage 2.0 - 4.0 V DS GS D GS(th) R Static Drain to Source On Resistance V = 10 V, I = 0.45 A - 9.7 12 DS(on) GS D g Forward Transconductance V = 40 V, I = 0.45 A -0.92 - S FS DS D (Note4) Dynamic Characteristics C Input Capacitance - 165 215 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance - 18 25 pF oss f = 1.0 MHz C Reverse Transfer Capacitance - 3.6 4.7 pF rss Switching Characteristics t Turn-On Delay Time -14 40 ns V = 300 V, I = 1.0 A, d(on) DD D t Turn-On Rise Time - 45 100 ns R = 25 r G t Turn-Off Delay Time - 25 60 ns d(off) t Turn-Off Fall Time (Note 4,5) - 35 80 ns f Q Total Gate Charge V = 480 V, I = 1.0 A, -5.9 7.7 nC g DS D Q Gate-Source Charge V = 10 V - 1.0 - nC gs GS Q Gate-Drain Charge - 2.7 - nC (Note 4,5) gd Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 0.9 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 3.0 A SM V Drain to Source Diode Forward Voltage V = 0 V, I = 0.9 A - - 1.4 V SD GS S t Reverse Recovery Time V = 0 V, I = 1.0 A, - 180 - ns rr GS S dI / dt = 100 A/s Q Reverse Recovery Charge - 0.47 - C F (Note 4) rr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 115mH, I = 0.9A, V = 50V, R = 25 Starting T = 25C AS DD G J 3. I 1.0A, di/dt 300A/ s, V BV Starting T = 25C SD DD DSS, J 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature www.onsemi.com 2