MSQA6V1W5T2G, SZMSQA6V1W5T2G ESD Protection Diode Array Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for www.onsemi.com applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a SCALE 2:1 premium. SC88A/SOT323 Features CASE 419A Low Clamping Voltage Stand Off Voltage 3 V 1 5 Low Leakage < 1 A 3 V SC88A Package Allows Four Separate Unidirectional 2 Configurations IEC100042 Level 4 ESD Protection 3 4 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and MARKING DIAGRAM PPAP Capable PbFree Package is Available* Mechanical Characteristics: 61 M Void Free, TransferMolded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly 61 = Device Code Small Package Size for High Density Applications M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MSQA6V1W5T2G SC88A 3,000 / (PbFree) Tape & Reel SZMSQA6V1W5T2G SC88A 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *T2 Suffix Devices are Packaged with Pin 1 Opposing Sprocket Hole. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2017 Rev. 8 MSQA6V1W5T2/DMSQA6V1W5T2G, SZMSQA6V1W5T2G MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 20 s P pk T 25C (Note 1) 150 W A Steady State Power 1 Diode (Note 2) P 385 mW D Thermal Resistance R JA JunctiontoAmbient 325 C/W Above 25C, Derate 3.1 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T T 55 to +150 C J stg ESD Discharge V kV PP MIL STD 883C Method 30156 16 IEC100042, Air Discharge 16 IEC100042, Contact Discharge 9 Lead Solder Temperature (10 s duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current per Figure 5. Derate per Figure 10. 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR4 board with min pad. D See Application Note AND8308/D for further description of survivability specs. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I V Forward Voltage I PP F F P Peak Power Dissipation pk UniDirectional C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS Breakdown Voltage V 1 mA (Vo) BR Max (Note 3) V C Leakage Current Capacitance V I = 200 F F Per IEC6100042 I V = 3 V 0 V Bias mA RM RWM Min Nom Max (Note 4) Device* ( A) (pF) (V) MSQA6V1W5T2G 6.1 6.6 7.2 1.0 90 1.25 Figures 1 and 2 See Below 3. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. *Include SZ-prefix devices where applicable. www.onsemi.com 2