X-On Electronics has gained recognition as a prominent supplier of BP104S Photodiodes across the USA, India, Europe, Australia, and various other global locations. BP104S Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BP104S OSRAM

BP104S electronic component of OSRAM
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See Product Specifications
Part No.BP104S
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin SMT
Datasheet: BP104S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.927 ea
Line Total: USD 0.93 
Availability - 0
MOQ: 1  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1500
1 : USD 0.927
5 : USD 0.499
11 : USD 0.337
81 : USD 0.3219

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.333

   
Manufacturer
Product Category
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Power Dissipation
Mounting
Operating Temp Range
Package Type
Pin Count
Polarity
Light Current
Photodiode Type
Type
Responsivity
Operating Temperature Classification
Forward Voltage
Reverse Breakdown Voltage
Photodiode Material
Rad Hardened
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We are delighted to provide the BP104S from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BP104S and other electronic components in the Photodiodes category and beyond.

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BP104, BP104S www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: top view Dimensions (in mm): 5.4 x 4.3 x 3.2 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times Angle of half sensitivity: = 65 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 948386 1 Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BP104 is a PIN photodiode with high speed and high radiant APPLICATIONS sensitivity in miniature, flat, top view plastic package with High speed detector for infrared radiation daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. Infrared remote control and free air data transmission BP104S is packed in tubes, specifications like BP104. systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BP104 45 65 870 to 1050 BP104S 45 65 870 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BP104 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view BP104S Tube MOQ: 1800 pcs, 45 pcs/tube Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.6, 24-Aug-11 Document Number: 81500 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BP104, BP104S www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit Voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Short circuit current E = 1 mW/cm , = 950 nm I 38 A e k 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 40 45 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 870 to 1050 nm 0.5 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 100 100 10 V = 5 V 10 R = 950 nm 1 V = 10 V R 1 0.1 100 20 40 60 80 0.01 0.1 1 10 94 8403 T - Ambient Temperature (C) E - Irradiance (mW/cm) amb 94 8414 e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 100 2 1 mW/cm V =5V R 2 1.2 0.5 mW/cm = 950 nm = 950 nm 2 0.2 mW/cm 1.0 10 2 0.1 mW/cm 2 0.8 0.05 mW/cm 2 0.02 mW/cm 0.6 1 0 20 40 60 80 100 0.1 1 10 100 T - Ambient Temperature (C) 94 8409 amb V - Reverse Voltage (V) 94 8415 R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Reverse Light Current vs. Reverse Voltage Rev. 1.6, 24-Aug-11 Document Number: 81500 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Light Current (A) I - Reverse Light Current (A) ra ra I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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