BP104, BP104S www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: top view Dimensions (in mm): 5.4 x 4.3 x 3.2 2 Radiant sensitive area (in mm ): 7.5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times Angle of half sensitivity: = 65 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 948386 1 Note ** Please see document Vishay Material Category Policy: www.vishay.com/doc 99902 DESCRIPTION BP104 is a PIN photodiode with high speed and high radiant APPLICATIONS sensitivity in miniature, flat, top view plastic package with High speed detector for infrared radiation daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. Infrared remote control and free air data transmission BP104S is packed in tubes, specifications like BP104. systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BP104 45 65 870 to 1050 BP104S 45 65 870 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BP104 Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view BP104S Tube MOQ: 1800 pcs, 45 pcs/tube Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 3 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.6, 24-Aug-11 Document Number: 81500 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BP104, BP104S www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit Voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Short circuit current E = 1 mW/cm , = 950 nm I 38 A e k 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 40 45 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 950 nm p Range of spectral bandwidth 870 to 1050 nm 0.5 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/ Hz R Rise time V = 10 V, R = 1 k, = 820 nm t 100 ns R L r Fall time V = 10 V, R = 1 k, = 820 nm t 100 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 100 100 10 V = 5 V 10 R = 950 nm 1 V = 10 V R 1 0.1 100 20 40 60 80 0.01 0.1 1 10 94 8403 T - Ambient Temperature (C) E - Irradiance (mW/cm) amb 94 8414 e Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 100 2 1 mW/cm V =5V R 2 1.2 0.5 mW/cm = 950 nm = 950 nm 2 0.2 mW/cm 1.0 10 2 0.1 mW/cm 2 0.8 0.05 mW/cm 2 0.02 mW/cm 0.6 1 0 20 40 60 80 100 0.1 1 10 100 T - Ambient Temperature (C) 94 8409 amb V - Reverse Voltage (V) 94 8415 R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Reverse Light Current vs. Reverse Voltage Rev. 1.6, 24-Aug-11 Document Number: 81500 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Light Current (A) I - Reverse Light Current (A) ra ra I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro