This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1127 Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 5.00.2 4.00.2 Complementary to 2SC2634 Features Low noise voltage NV High forward current transfer ratio h FE 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.15 +0.15 0.45 0.45 0.1 0.1 +0.6 +0.6 Collector-base voltage (Emitter open) V 60 V 2.5 2.5 CBO 0.2 0.2 Collector-emitter voltage (Base open) V 55 V CEO 123 Emitter-base voltage (Collector open) V 7V EBO 1: Emitter 2: Collector Collector current I 100 mA C 3: Base Peak collector current I 200 mA CP EIAJ: SC-43A TO-92-B1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 55 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Base-emitter voltage V V = 1 V, I = 30 mA 1V BE CE C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 1 100 nA CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 0.01 1.00 A CEO CE B * Forward current transfer ratio h V = 5 V, I = 2 mA 180 700 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.6 V CE(sat) C B Transition frequency f V = 5 V, I = 2 mA, f = 200 MHz 200 MHz T CB E Noise voltage NV V = 10 V, I = 1 mA, G = 80 dB 150 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S T h 180 to 360 260 to 520 360 to 700 FE Publication date: March 2004 SJC00013BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1127 P T I V I V C a C CE C BE 500 80 120 V = 5 V CE T = 25C a 25C 100 400 I = 200 A B T = 75C 25C a 60 180 A 160 A 80 300 140 A 120 A 40 60 100 A 200 80 A 40 60 A 20 100 40 A 20 20 A 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) ( ) ( ) Collector-emitter voltage V V Base-emitter voltage V V a CE BE V I h I f I CE(sat) C FE C T E 100 600 240 I / I = 10 C B V = 5 V CE V = 5 V CB T = 25C a 500 200 T = 75C a 10 400 160 25C 1 300 120 25C 200 80 T = 75C a 25C 0.1 25C 100 40 0.01 0 0 0.1 1 10 100 0.1 1 10 100 1 10 100 ( ) Collector current I (mA) Collector current I mA Emitter current I (mA) C C E C V NV I ob CB C 10 100 I = 0 E V = 10 V CE f = 1 MHz G = 80 dB V T = 25C a Function = FLAT 8 80 R = 100 k g 6 60 22 k 4 40 5 k 2 20 0 0 1 10 100 0.01 0.1 1 Collector-base voltage V (V) ( ) Collector current I mA CB C SJC00013BED 2 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.