DB3X313N0L Panasonic

DB3X313N Silicon epitaxial planar type For small current rectication Unit: mm Features Low forward voltage V and small reverse current I F R Low terminal capacitance C t Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4N Basic Part Number Dual DB2J313 (Common Cathode) Packaging DB3X313N0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Anode-1 3: Cathode-1 Parameter Symbol Rating Unit 2: Anode-2 Cathode-2 Reverse voltage V 30 V R Panasonic Mini3-G3-B Repetitive peak reverse voltage V 30 V RRM JEITA SC-59A Single 200 Forward current (Average) I mA Code TO-236AA/SOT-23 F(AV) 1 * Double 130 Single 300 3 Peak forward current I mA FM 1 * Double 220 Single 1.0 Non-repetitive peak reverse I A FSM 2 * 1 * surge voltage Double 0.7 Junction temperature T 125 C 1 2 j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg Note) 1: Value of each diode in double diodes used. * 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Forward voltage V I = 200 mA 0.55 V F F Reverse current I V = 30 V 50 mA R R Terminal capacitance C V = 10 V, f = 1 MHz 3.8 pF t R 1 * Reverse recovery time t I = I =100 mA, I = 0.1 I , R = 100 1.5 ns rr F R rr R L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 GHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.1 I rr R t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA Pulse Generator Wave Form Analyzer r R = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: May 2013 Ver. CED 1DB3X313N DB3X313N Ct-VR DB3X313N I -V DB3X313N I -V F F R R I V I V C V F F R R t R 2 1 10 25 T = 125C Pulse test a T = 25C a 3 100C 10 1 85C 10 20 T = 125C a 4 10 2 25C 10 15 5 10 100C 6 10 3 10 10 85C 7 40C 10 25C 4 10 5 8 10 40C 5 9 0 10 10 0 10 20 30 0 0.2 0.4 0.6 0 10 20 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R Ver. CED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t