BC857BS PNP GENERAL PURPOSE DUALTRANSISTORS 45 Volt POWER 150 mWatt VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00021 ounce, 0.006 gram Marking: 57S ABSOLUTE MAXIMUM RATINGS PlARAMETER Seymbo Vsalu Unit CVollector - Emitter Voltage CEO -V45 CVollector - Base Voltage CBO -V50 EVmitter - Base Voltage EBO -V5.0 CIollector Current- Continuous C 1A00 m THERMAL CHARACTERISTICS PlARAMETER Seymbo Vsalu Unit TotalDevice Dissipation 300 mW O Per Device FR-5 Board (Note 1)T =25 C P 150 A D O O Derate above 25 C 3.0 mW/ C O ThermalResistance ,Junctionto Ambient R 328 C/W JA O JunctionTemperature T -55 to 150 C J O Storage Temperature T -55 to 150 C STG Note : 1.FR-4 board 70 x 60 x 1mm. September 13,2017-REV.04 PAGE . 1BC857BS O ELECTRICAL CHARACTERISTICS (T =25 C, unless otherwise noted) J PARAMETER Symbol Test Condition MIN. TYP. MAX. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown V I =-10mA -45 - - V (BR)CEO C Voltage Collector - Emitter Breakdown V I =-10uA, V =0 -50 - - (BR)CES C EB Voltage I =-10uA -50 - - V Collector - Base Breakdown Voltage V (BR)CBO C Emitter - Base Breakdown Voltage V I =-1uA -5.0 - - V (BR)EBO E V =-30V, -15 nA CB Collector Cutoff Current I -- O CBO V =-30V, T =150 C -5.0 uA CB A ON CHARACTERISTICS DC Current Gain h I =-10uA, V =-5V - 150 - - FE C CE DC Current Gain h I =-2.0mA, V =-5V 2 20 2 90 475 - FE C CE Collector - Emitter Saturation I =-10mA, I =-0.5mA - -0.3 C B V - V CE(SAT) Voltage I =-100mA, I =-5.0mA - -0.65 C B I =-10mA, I =-0.5mA - -0.7 - C B Base - Emitter Saturation Voltage V V BE(SAT) I =-100mA, I =-5.0mA - -0.9 - C B I =-2mA, V =-5.0V -0.6 - -0.75 C CE Base - Emitter Voltage V V BE(ON) I =-10mA, V =-5.0V - - -0.82 C CE SMALL-SIGNAL CHARACTERISTICS I =-10mA,V =-5.0Vdc C CE Current-Gain-Bandwidth Product f 100 - - MH T Z f=100MH Z Output Capacitance C V =-10V,f=1.0MH -- 4.5 pF obo CB Z I =0.2mA,V =5.0Vdc, C CE Noise Figure NF R =2.0k,f=1.0kH , - - 10 dB S Z BW=200H Z 6 5 4 1 2 3 Fig.53 September 13,2017-REV.04 PAGE . 2