PSIS100/12 Powersem

TM ECO-PAC 2 PSIG 100/12 IGBT Module I = 138 A C25 PSIS 100/12* V = 1200 V Short Circuit SOA Capability CES PSSI 100/12* Square RBSOA V = 2.8 V CE(sat)typ. Preliminary Data Sheet X15 AC 1 IK 10 NTC AIJK LMN S L9 T16 X16 X15 L9 F1 NTC IK 10 AC 1 X16 PSIG 100/12 PSIS 100/12* PSSI 100/12* IGBTs *NTC optional Symbol Conditions Maximum Ratings V T = 25C to 150C 1200 V Features CES VJ Package with DCB ceramic V 20 V GES base plate I T = 25C 138 A Isolation voltage 3000 V C25 C I T = 80C 94 A C80 C Planar glass passivated chips Low forward voltage drop I V = 15 V R = 15 T = 125C 150 A CM GE VJ G Leads suitable for PC board V RBSOA, Clamped inductive load L = 100 H V CEK CES soldering t V = V V = 15 V R = 15 T = 125C 10 s CES GE VJ SC CE G UL registered, E 148688 (SCSOA) non-repetitive P T = 25C 568 W Applications tot C AC and DC motor control AC servo and robot drives Symbol Conditions Characteristic Values power supplies (T = 25C, unless otherwise specified) VJ welding inverters min. typ. max. V I = 125 A V = 15 V T = 25C 2.8 3.4 V VJ CE(sat) C GE Advantages T = 125C 3.2 V VJ Easy to mount with two screws V I = 3 mA V = V 4.5 6.5 V Space and weight savings GE(th) C GE CE Improved temperature and I V = V V = 0 V T = 25C 5 mA VJ CES CE CES GE power cycling capability T = 125C 16 mA VJ I V = 0 V V = 20 V 320 nA GES CE GE t 100 ns d(on) Inductive load, T = 125C t VJ 50 ns r V = 600 V I = 75 A t 650 ns CE C d(off) V = 15/0 V R = 15 t 50 ns GE G f E 12.1 mJ on E 10.5 mJ off C V = 25 V V = 0 V f = 1 MHz 5.5 nF ies CE GE R (per IGBT) 0.22 K/W thJC R with heatsink compound (0.42 K/m.K 50 m) 0.44 K/W thJH Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20PSIG PSIS PSSI 100/12 Reverse diodes (FRED) Package style and outline Symbol Conditions Maximum Ratings Dimensions in mm (1mm = 0.0394) I T = 25C 154 A F25 C I T = 80C 97 A F80 C PSIG Symbol Conditions Characteristic Values min. typ. max. V I = 75 A T = 25C 2.2 2.5 V VJ F F T = 125C 1.6 V VJ I I = 75 A di /dt = 750 A/s T = 125C 79 A VJ RM F F t V = 600 V V = 0 V 220 ns rr R GE R 0.45 K/W thJC R with heatsink compound (0.42 K/m.K 50 m) 0.9 K/W thJH Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R T = 25C 4.75 5.0 5.25 k 25 B 3375 K 25/50 PSSI Module Symbol Conditions Maximum Ratings T -40...+150 C VJ T -40...+150 C stg V I 1 mA 50/60 Hz 3000 V~ ISOL ISOL M Mounting torque (M4) 1.5 - 2.0 Nm d 14 - 18 lb.in. 2 a Max. allowable acceleration 50 m/s Symbol Conditions Characteristic Values min. typ. max. d Creepage distance on surface (Pin to heatsink) 11.2 mm S d Strike distance in air (Pin to heatsink) 11.2 mm A PSIS Weight 24 g 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20