ECG006 InGaP HBT Gain Block Product Features Product Description Functional Diagram GND 4 The ECG006 is a general-purpose buffer amplifier that DC 5.5 GHz offers high dynamic range in a low-cost surface-mount +15.5 dBm P1dB at 1 GHz package. At 1000 MHz, the ECG006 typically provides 15 +32 dBm OIP3 at 1 GHz dB of gain, +32 dBm Output IP3, and +15.5 dBm P1dB. 1 2 3 15 dB Gain at 1 GHz RF IN GND RF OUT The ECG006 consists of Darlington pair amplifiers using 3.7 dB Noise Figure ECG006B-G the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, Available in lead-free/green SOT-86, GND and an inductive RF choke for operation. The device is 4 SOT-363, & SOT-89 package styles ideal for wireless applications and is available in low-cost, Internally matched to 50 RF In RF Out surface-mountable plastic lead-free/green/RoHS-compliant 1 3 SOT-363, SOT-86 and SOT-89 packages. All devices are 100% RF and DC tested. 2 Applications GND The broadband MMIC amplifier can be directly applied to Mobile Infrastructure ECG006C-G various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, CATV / FTTX GND 1 6 RF OUT the ECG006 will work for other various applications within W-LAN / ISM the DC to 5.5 GHz frequency range such as CATV and GND 2 5 GND RFID mobile wireless. RF IN 3 4 GND WiMAX / WiBro ECG006F-G (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 5500 Frequency MHz 500 900 1900 2140 Test Frequency MHz 1000 S21 dB 15.5 15 14.2 14 Gain dB 15 S11 dB -20 -14 -17.4 -18 Output P1dB dBm +15.4 S22 dB -16 -13 -14.5 -15 (2) Output IP3 dBm +32 Output P1dB dBm +15.8 +15.4 +15 +15 (2) Output IP3 dBm +32 +32 +30 +30 Test Frequency MHz 2000 Noise Figure dB 3.7 3.7 3.7 3.7 Gain dB 12 14 18 Input Return Loss dB 18 Output Return Loss dB 14 Output P1dB dBm +12 +15 (2) Output IP3 dBm +32 Noise Figure dB 4.0 Device Voltage V 3.5 3.9 4.3 Device Current mA 45 1. Test conditions unless otherwise noted: 25 C, Supply Voltage = +5 V, Rbias = 24.3 , 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Ordering Information Part No. Description Absolute Maximum Rating InGaP HBT Gain Block ECG006B-G (lead-free/green/RoHS-compliant SOT-89 package) InGaP HBT Gain Block Parameter Rating ECG006C-G (lead-free/green/RoHS-compliant SOT-86 package) Operating Case Temperature -40 to +85 C InGaP HBT Gain Block ECG006F-G Storage Temperature -55 to +150 C (lead-free/green/RoHS-compliant SOT-363 package) Device Current 150 mA ECG006B-PCB 700 2400 MHz Fully Assembled Eval. Board RF Input Power (continuous) +12 dBm ECG006C-PCB 700 2400 MHz Fully Assembled Eval. Board Junction Temperature +250 C ECG006F-PCB 700 2400 MHz Fully Assembled Eval. Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com Page 1 of 7 April 2007 ECG006 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, R = 24.3 , I = 45 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 15.3 15.2 15.1 14.5 14.3 14.1 13.9 10.2 S11 dB -20 -18 -14 -17 -18 -20 -17 -12.5 S22 dB -29 -16 -13 -14 -14 -15 -15 -9.5 Output P1dB dBm +15.8 +15.4 +15.2 +15.0 +14.9 +14.6 +14 Output IP3 dBm +31 +31.5 +32 +30 +30 +29.6 Noise Figure dB 3.8 3.7 3.6 3.6 3.6 3.6 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = +3.9 V, Rbias = 24.3 , Icc = 45 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency S11, S22 vs. Frequency Vde vs. Icc 90 18 0 80 16 -5 70 60 14 -10 50 S22 +25C 40 12 -15 30 20 10 -20 S11 10 +25C -40C +85C 8 0 -25 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 500 1000 1500 2000 2500 3000 0 1 2 3 4 5 6 Frequency (MHz) Frequency (GHz) Vde (V) OIP3 vs. Frequency Noise Figure vs. Frequency P1dB vs. Frequency 35 18 4 16 30 3.5 14 3 25 12 2.5 20 10 +25C -40C +85C +25C -40C +85C 2 15 8 500 1000 1500 2000 500 1000 1500 2000 2500 3000 500 1000 1500 2000 2500 3000 Frequency (MHz) Frequency (MHz) Frequency (MHz) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales wj.com Web site: www.wj.com Page 2 of 7 April 2007 OIP3 (dBm) Gain NF (dB) S11, S22 (dB) P1dB (dBm) Icc (mA)