X-On Electronics has gained recognition as a prominent supplier of RFFM8505SR RF Front End across the USA, India, Europe, Australia, and various other global locations. RFFM8505SR RF Front End are a product manufactured by Qorvo. We provide cost-effective solutions for RF Front End, ensuring timely deliveries around the world.

RFFM8505SR Qorvo

RFFM8505SR electronic component of Qorvo
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Part No.RFFM8505SR
Manufacturer: Qorvo
Category: RF Front End
Description: RF Front End 4.9-5.85GHz FEM WiFi 802.11a/n/ac
Datasheet: RFFM8505SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 7.4217
200 : USD 2.7911
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Obsolete
   
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RoHS - XON
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NF - Noise Figure
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Development Kit
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We are delighted to provide the RFFM8505SR from our RF Front End category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFFM8505SR and other electronic components in the RF Front End category and beyond.

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ANT TX GND GND C RX PA EN PDET LNA EN RFFM8505 RFFM8505 4.9GHz to 5.85GHz 802.11a/n/ac WiFi Front End Module Package: QFN, 16-pin, 2.5mm x 2.5mm x 0.40mm The RFFM8505 provides a complete integrated solution in a single front Features end module (FEM) for WiFi 802.11a/n/ac systems. The ultra-small P =17.5dBm, 11ac, 80MHz factor and integrated matching minimizes layout area in the customers OUT 1.5% (-36.5dB) EVM application and greatly reduces the number of external components. P =19.5dBm, 11n 20MHz This simplifies the total front end solution by reducing the bill of OUT 2.5% (-32dB) EVM materials, system footprint, and manufacturing cost. The RFFM8505 Input and Output Matched to 50 integrates a 5 GHz power amplifier (PA), single pole double throw switch Integrated 5GHz PA, SP2T Switch, (SP2T), LNA with bypass, and a power detector coupler for improved LNA, and PDET accuracy. The device is provided in a 2.5mm x 2.5mm x 0.40mm, 16- Low Height Package, Suited for pin QFN package. This module meets or exceeds the RF front end SiP and CoB designs needs of IEEE 802.11a/n/ac WiFi RF systems. Supports low power mode for improved efficiency 14 16 15 13 Applications GND 1 12 GND Cellular Handsets Mobile Devices RX 11 VCC 2 Tablets GND 3 10 VCC Consumer Electronics Gaming 4 VCC 9 VMODE Netbooks/Notebooks 5 6 7 8 TV/Monitors/Video Functional Block Diagram Ordering Information RFFM8505SB Standard 5-piece sample bag RFFM8505SQ Standard 25-piece sample bag RFFM8505SR Standard 100-piece reel RFFM8505TR7 Standard 2500-piece reel RFFM8505PCK-410 Fully assembled evaluation board w/ 5-piece bag RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131106 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. 2013, RF Micro Devices, Inc. 1 of 9 RFFM8505 Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit DC Supply Voltage (No RF Applied) 6 V PA Enable Voltage -0.5 to 5 V DC DC Supply Current 500 mA RFMD Green: RoHS status based on EU Directive 2011/65/EU (at time of this Operating Temperature Range -40 to +85 C document revision), halogen free per IEC 61249-2-21, < 1000ppm each of Storage Temperature -40 to +150 C antimony trioxide in polymeric materials Maximum TX Input Power into 50 Load for 11a/n/ac (No +12 dBm and red phosphorus as a flame retardant, Damage) and <2% antimony in solder. LNA On Maximum RX input power (No damage) +12 dBm Exceeding any one or a combination of the Absolute Bypass Mode Maximum RX input power (No damage) +25 dBm Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Moisture Sensitivity MSL2 Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Compliance 802.11a, 802.11n, 802.11ac Operating Frequency 5.15 5.825 GHz Extended Frequency 4.9 5.85 GHz Functional with reduced performance -3dB lower TX power Operating Temperature -10 70 C Extended Operating Temperature -40 85 C Functional with reduced performance Power Supply V 3.2 3.6 4.6 V CC Extended V 3 5.0 V Please see 5 volts apps schematic CC Control Voltage-high 2.8 3.1 V V PA EN, C RX, LNA EN, V . Should not exceed V voltage CC MODE CC Control Voltage-low 0 0.4 V T= -10C to +70C, V =3.2V to 4.6V, Transmit (TX-ANT) High Power CC Mode 50% Duty Cycle unless otherwise noted HT80 Output Power 17.0 17.5 dBm T= 25C, VCC= 3.6V 80MHz 802.11ac - Dynamic EVM 1.5 1.8 % -36.5 -35.0 dB HT80 Output Power 16.0 dBm T= -10C to +70C, V =3.2V to 4.6V CC 80MHz 802.11ac - Dynamic EVM 1.5 1.8 % -36.5 -35.0 dB HT20 Output Power 19.0 19.5 dBm T= 25C, V = 3.6V CC 20MHz 802.11n - Dynamic EVM 2.5 3 % -32 -30.5 dB HT20 Output Power 18.0 dBm T= -10C to +70C, V =3.2V to 4.6V CC 20MHz 802.11n - Dynamic EVM 2.5 3 % -32 -30.5 dB 20/80MHz 802.11ac - Spectral Mask 22 dBm T= 25C, V = 3.6V CC 40MHz 802.11n - Spectral Mask 21 dBm TX Port Return Loss 10 18 dB ANT Port Return Loss 10 18 dB Large Signal Gain 24 28 31 dB T= 25C, V = 3.6V CC 23 28 31 dB T= -10C to +70C, V =3.2V to 4.6V CC Gain flatness over any 80MHz BW -0.5 0.5 dB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131106 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice rfmd.com. The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9

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