RFMD + TriQuint = Qorvo RFSW8000 RFSW8000 2.5V to 5.0V, 5MHz to 6500MHz 10W SPDT Switch Package: DFN, 2.0mm x 2.0mm x 0.55mm The RFSW8000 is a high power single-pole double-throw (SPDT) switch designed for high performance wireless applications. This Features wideband switch has been designed for use from 5MHz to 6.5GHz, Single Voltage: 2.5V to 5.0V where extremely high linearity, high isolation, low insertion loss, and small package size are required. Switching for the RFSW8000 is 40dBm P1dB controlled via two control voltage inputs. 30dB Isolation at 2GHz The RFSW8000 is manufactured in a pHEMT GaAs process and packaged in an 8-pin, 2.0mm x 2.0mm Dual-Flat-No-Lead (DFN) Applications plastic package. IEEE 802.11a/n WiFi Systems IEEE 802.16 WiMAX Systems IEEE 802.15.4 ZigBee Systems VRF1 1 1 8 RF1 Customer Premise Equipment (CPE) Wireless Access Points, Gateways 2 7 2 RFC GND and Router Applications ISM Band Transmitter Applications 3 6 GND GND 4 5 4 RF2 VRF2 Functional Block Diagram Ordering Information RFSW8000SB Standard 5 piece bag RFSW8000SQ Standard 25 piece bag RFSW8000SR Standard 100 piece reel RFSW8000TR7 Standard 2500 piece reel RFSW8000PCK-410 Eval board (100MHz to 2000MHz) w/5 piece bag RFSW8000PCK-411 Eval board (2000MHz to 4500MHz) w/5 piece bag RFSW8000PCK-412 Eval board (4500MHz to 6500MHz) w5 piece bag Revision DS20151020 1 of 8 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com RFMD + TriQuint = Qorvo Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Supply Voltage (RF Applied) -0.5 to +5.25 V Supply Voltage (No RF Applied) -0.5 to +5.5 V RFMD Green: RoHS status based on EU DC Supply Current 10 mA Directive 2011/65/EU (at time of this document revision), halogen free per IEC Input RF Power +40* dBm 61249-2-21, < 1000ppm each of antimony Max Input Power, OFDM Modulated, 3:1 Load VSWR +36 dBm trioxide in polymeric materials and red phosphorus as a flame retardant, and Operating Ambient Temperature -40 to +85 C <2% antimony in solder. Storage Temperature -40 to +150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent Moisture Sensitivity MSL2 damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Typical Conditions Temp = 25C, VC = 3.0V unless otherwise noted Performance - Low Band Optimized at 700 MHz to 950MHz Frequency 100 2000 MHz Insertion Loss 0.4 0.6 dB Input P0.1 dB 39 40 dBm At higher VCONTROL, P0.1dB will be improved Input Return Loss 20 25 dB Isolation 26 29 dB Harmonics (2nd, 3rd) 80 dBc at P = 30dBm OUT IIP3 59 dBm Performance - Mid Band Optimized at 2.1GHz to 2.7GHz Frequency 2000 4500 MHz Insertion Loss 0.55 0.65 dB In optimized frequency band 0.95 dB in full frequency band Input P0.1 dB 39 40 dBm At higher V , P0.1dB will be improved CONTROL Input Return Loss 15 20 dB Isolation 26 29 dB Harmonics (2nd, 3rd) 80 dBc at P = 30dBm OUT IIP3 59 dBm Performance - High Band Optimized at 5.1GHz to 5.9GHz Frequency 4500 6500 MHz Insertion Loss 0.85 1 dB In optimized frequency band Input P0.1 dB RF1 to RFC 35 36 dBm At higher V , P0.1dB will be improved CONTROL Input P0.1 dB RF2 to RFC 37 38 dBm At higher V , P0.1dB will be improved CONTROL Input Return Loss 14 20 dB Isolation 24 25.5 dB Harmonics (2nd, 3rd) 80 dBc at P = 30dBm OUT IIP3 55 dBm Revision DS20151020 1 of 8 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com