2N2219A TO-39 NPN SILICON PLANAR SWITCHING TRANSISTORS Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2219A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 800 mA Power Dissipation Ta=25 degC PD 800 mW Derate Above 25deg C 4.57 mW/deg C Tc=25 degC PD 3.0 W Derate Above 25deg C 17.1 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT Collector -Emitter Voltage VCEO IC=10mA,IB=0 40 - V VCBO IC=10uA.IE=0 75 - V Collector -Base Voltage Emitter-Base Voltage VEBO IE=10uA, IC=0 6.0 - V Collector-Cut off Current ICBO VCB=60V, IE=0 - 10 nA Ta=150 deg C VCB=60V, IE=0 - 10 uA ICEX VCE=60V, VEB=3V - 10 nA Emitter-Cut off Current IEBO VEB=3V, IC=0 - 10 nA Base-Cut off Current IBL VCE=60V, VEB=3V - 20 nA Collector Emitter Saturation Voltage VCE(Sat)* IC=150mA,IB=15mA - 0.3 V IC=500mA,IB=50mA 1.0 V Base Emitter Saturation Voltage VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 V IC=500mA,IB=50mA - 2.0 V REV C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N2219A DESCRIPTION SYMBOL TEST CONDITION UNIT DC Current Gain hFE IC=0.1mA,VCE=10V >35 IC=1mA,VCE=10V >50 IC=10mA,VCE=10V >75 Ta=55 deg C IC=10mA,VCE=10V >35 IC=150mA,VCE=10V 100-300 IC=150mA,VCE=1V >50 IC=500mA,VCE=10V >40 DYNAMIC CHARACTERISTICS ALL f=1kHz Small Signal Current Gain hfe IC=1mA, VCE=10V 50-300 IC=10mA, VCE=10V 75-375 Input Impedance hie IC=1mA, VCE=10V 2.0-8.0 kohms IC=10mA, VCE=10V 0.25-1.25 Voltage Feedback Ratio hre IC=1mA, VCE=10V <8.0 x10-4 IC=10mA, VCE=10V <4.0 Out put Admittance hoe IC=1mA, VCE=10V 5.0-35 umhos IC=10mA, VCE=10V 25-200 Collector Base Time Constant rb Cc IE=20mA, VCB=20V <150 ps f=31.8MHz Real Part Common-Emitter High Frequency Re(hie) IC=20mA, VCE=20V <60 ohms Input Impedance f=300MHz Noise Figure NF IC=100uA, VCE=10V - <4.0 dB Rs=1kohms, f=1kHz DYNAMIC CHARACTERISTICS Transistors Frequency ft IC=20mA, VCE=20V >300 MHz f=100MHz Out-Put Capacitance Cob VCB=10V, IE=0 <8.0 pF f=100kHz Input Capacitance Cib VEB=0.5V, IC=0 <25 pF f=100kHz SWITCHING Time Delay time td IC=150mA,IB1=15mA <10 ns Rise time tr VCC=30V,VBE=0.5V - <25 ns Storage time ts IC=150mA, IB1= <225 ns tf IB2=15mA, VCC=30V - <60 ns Fall time *Pulse Condition: Pulse Width=300us, Duty Cycle=2% Page 2 of 3