Data Sheet
BCR16FM-14LJ
R07DS0959EJ0400
700V - 16A - Triac
Rev.4.00
Medium Power Use
May 31, 2018
Features
I : 16 A Insulated Type
T (RMS)
V : 800 V (Tj=125 C) Planar Passivation Type
DRM
Tj: 150C Viso: 2000V
I , I , I : 30 mA
FGTI RGTI RGT III
Outline
RENESAS Package code: PRSS0003AG-A RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FP) (Package name: TO-220FPA)
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
1
2
2
3
3
Application
Power supply, motor control, heater control, solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter Symbol Voltage class Unit Conditions
14
Note1
Repetitive peak off-state voltage VDRM 800 V Tj=125 C
700 V Tj=150 C
Note1
Non-repetitive peak off-state voltage VDSM 840 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current I 16 A Commercial frequency, sine full wave
T (RMS)
360 conduction,
Note2
Tc = 87 C (#BB0, #BH0)
Note2
Tc = 81 C (#BG0)
Surge on-state current ITSM 160 A 60 Hz sinewave 1 full cycle, peak value,
non-repetitive
2 2 2
I t for fusion I t 106.5 A s Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation P 0.5 W
G (AV)
Peak gate voltage VGM 10 V
Peak gate current I 2 A
GM
Junction Temperature Tj 40 to +150 C
Storage temperature Tstg 40 to +150 C
Note6
Isolation voltage Viso 2000 V Ta=25 C, AC 1 minute,
T1 T2 G terminal to case
Notes: 1. Gate open.
2. Please refer to the Ordering Information.
R07DS0959EJ0400 Rev.4.00 Page 1 of 8
May 31, 2018 BCR16FM-14LJ Data Sheet
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current I 2.0 mA Tj = 150 C, V applied
DRM DRM
On-state voltage VTM 1.5 V Tc = 25 C, ITM = 25 A,
instantaneous measurement
Note3
Gate trigger voltage V 1.5 V Tj = 25 C, V = 6 V, R = 6 ,
FGT D L
R = 330
G
VRGT 1.5 V
V 1.5 V
RGT
Note3
Gate trigger curent I 30 mA Tj = 25 C, V = 6 V, R = 6 ,
FGT D L
R = 330
G
IRGT 30 mA
I 30 mA
RGT
Gate non-trigger voltage VGD 0.2 V Tj = 125 C, VD = 1/2 VDRM
0.1 V Tj = 150 C, V = 1/2 V
D DRM
Note4
Thermal resistance Rth (j-c) 3.5 C/W Junction to case
Note2
(#BB0, #BH0)
Note4
3.8 C/W Junction to case
Note2
(#BG0)
Critical-rate of rise of off-state (dv/dt)c 10 V/ s Tj = 125 C
Note5
commutation voltage
1 V/ s Tj = 150 C
Notes: 3. Measurement using the gate trigger characteristics measurement circuit.
4. The contact thermal resistance R in case of greasing is 0.5 C /W.
th(c-f)
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Supply Voltage Time
Tj = 125C/150C
(di/dt)c
2. Rate of decay of on-state commutating current
Time
Main Current
(di/dt)c = 8.0 A/ms
Main Voltage Time
3. Peak off-state voltage
(dv/dt)c
V
D
VD = 400 V
R07DS0959EJ0400 Rev.4.00 Page 2 of 8
May 31, 2018