Data Sheet BCR1AM-12A R07DS0177EJ0600 600V - 1A - Triac Rev.6.00 Low Power Use Sept. 10, 2019 Features I : 1 A Planar Passivation Type T (RMS) V : 600 V RoHS Compliant DRM I I, I I, I III: 7 mA Halogen-free (PRSS0003DJ-A) RGT RGT RGT Tj: 125 C Completely Pb-free (PRSS0003DJ-A) Outline RENESAS Package code: PRSS0003EA-A PRSS0003DJ-A (Package name: TO-92*) (Package name: TO-92) Ordering code: C01 BD0 2 1. T Terminal 1 2. T Terminal 2 3. Gate Terminal 3 1 1 1 3 3 2 2 Application Washing machine, electric fan, air cleaner, Solid State Relay and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit 12 Note1 Repetitive peak off-state voltage VDRM 600 V Note1 Non-repetitive peak off-state voltage V 720 V DSM Notes: 1. Gate open. Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 1.0 A Commercial frequency, sine full wave Note3 360 conduction, Tc = 56 C Surge on-state current I 10 A 60 Hz sinewave 1 full cycle, peak value, TSM non-repetitive 2 2 2 I t for fusing I t 0.41 A s Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Peak gate power dissipation P 1 W GM Average gate power dissipation PG (AV) 0.1 W Peak gate voltage V 6 V GM Peak gate current IGM 0.5 A Junction Temperature Tj 40 to +125 C Storage temperature Tstg 40 to +125 C R07DS0177EJ0600 Rev.6.00 Page 1 of 7 Sept. 10, 2019 BCR1AM-12A Data Sheet Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I 0.5 mA Tj = 125 C, V applied DRM DRM On-state voltage VTM 1.6 V Tc = 25 C, ITM = 1.5 A, instantaneous measurement Note2 Gate trigger voltage V 2.0 V Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G VRGT 2.0 V V 2.0 V RGT Note2 Gate trigger current I 7 mA Tj = 25 C, V = 6 V, R = 6 , FGT D L R = 330 G IRGT 7 mA I 7 mA RGT Gate non-trigger voltage VGD 0.1 V Tj = 125 C, VD = 1/2 VDRM Note3 Thermal resistance R 50 C/W Junction to case th (j-c) Critical-rate of rise of off-state (dv/dt)c 2 V/ s Tj = 125 C Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T terminal 1.5 mm away from the molded case. 2 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms Test conditions (inductive load) 1. Junction temperature Supply Voltage Time Tj = 125C (di/dt)c 2. Rate of decay of on-state commutating current Time Main Current (di/dt)c = 0.5 A/ms Main Voltage Time 3. Peak off-state voltage (dv/dt)c V D VD = 400 V R07DS0177EJ0600 Rev.6.00 Page 2 of 7 Sept. 10, 2019