R1LV0416DSB-7LI#B0 Renesas

R1LV0416D Series 4M SRAM (256-kword 16-bit) REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword 16-bit, fabricated by Renesas s high-performance 0.15m CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation therefore, it is suitable for battery backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array. Features Single 3.0 V supply: 2.7 V to 3.6 V Fast access time: 55/70 ns (max) Power dissipation: Standby: 3 W (typ) (V = 3.0 V) CC Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup Temperature Range: -40 to +85C Rev.1.00, May.24.2007, page 1 of 15 R1LV0416D Series Ordering Information Type No. Access time Package R1LV0416DSB-5SI 55 ns 400-mil 44-pin plastic TSOP II R1LV0416DSB-7LI 70 ns PTSB0044GA-A (44P3W-H) R1LV0416DBG-5SI 55 ns 48-ball CSP with 0.75 mm ball pitch R1LV0416DBG-7LI 70 ns PTBG0048HB-A (48FHH) Rev.1.00, May.24.2007, page 2 of 15