Preliminary Datasheet RJH1CV5DPK R07DS0746EJ0300 1200V - 25A - IGBT Rev.3.00 Application: Inverter Feb 14, 2013 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.8 V typ. (at I = 25 A, V = 15 V, Ta = 25C) CE(sat) C GE Built-in fast recovery diode (t = 170 ns typ.) in one package rr Trench gate and thin wafer technology High speed switching t = 165 ns typ. (at V = 600 V, V = 15 V, I = 25 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 1200 V CES R Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 50 A C Tc = 100C I 25 A C Note1 Collector peak current ic(peak) 75 A Collector to emitter diode forward current I 25 A DF Note1 Collector to emitter diode forward peak current i (peak) 75 A DF Note2 Collector dissipation P 245 W C Note2 Junction to case thermal resistance (IGBT) j-c 0.51 C/W Note2 Junction to case thermal resistance (Diode) j-cd 0.69 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0746EJ0300 Rev.3.00 Page 1 of 9 Feb 14, 2013 RJH1CV5DPK Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Zero gate voltage collector current I /I 5 A V = 1200 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.5 6.5 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.8 2.6 V I = 25 A, V = 15 V CE(sat) C GE Note3 V 2.8 V I = 50 A, V = 15 V CE(sat) C GE Input capacitance Cies 1150 pF V = 25 V CE V = 0 GE Output capacitance Coes 70 pF f = 1 MHz Reverse transfer capacitance Cres 30 pF Total gate charge Qg 72 nC V = 15 V GE V = 300 V Gate to emitter charge Qge 8 nC CE I = 25 A C Gate to collector charge Qgc 40 nC Turn-on delay time t 42 ns V = 600 V d(on) CC V = 15 V GE Rise time t 24 ns r I = 25 A C Turn-off delay time t 105 ns d(off) Rg = 5 Fall time t 165 ns f Inductive load Turn-on energy E 1.9 mJ on Turn-off energy E 1.5 mJ off Total switching energy E 3.4 mJ total Short circuit withstand time t 5 s V 720 V, V = 15 V sc CC GE Tc 125C Note3 FRD forward voltage V 1.8 V I = 25 A F F FRD reverse recovery time t 170 ns I = 25 A rr F di /dt = 100 A/ s F FRD reverse recovery charge Q 0.62 C rr FRD peak reverse recovery current I 9.2 A rr Notes: 3. Pulse test. R07DS0746EJ0300 Rev.3.00 Page 2 of 9 Feb 14, 2013