X-On Electronics has gained recognition as a prominent supplier of RJH60D2DPP-M0#T2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RJH60D2DPP-M0#T2 IGBT Transistors are a product manufactured by Renesas. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RJH60D2DPP-M0#T2 Renesas

RJH60D2DPP-M0#T2 electronic component of Renesas
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Part No.RJH60D2DPP-M0#T2
Manufacturer: Renesas
Category: IGBT Transistors
Description: IGBT Transistors IGBT
Datasheet: RJH60D2DPP-M0#T2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.6857 ea
Line Total: USD 6.69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 2.0594
10 : USD 1.9375

0
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 6.6857
10 : USD 2.4291
25 : USD 2.2954
100 : USD 1.9723
250 : USD 1.8831
500 : USD 1.6714
1000 : USD 1.482
2500 : USD 1.4374

   
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We are delighted to provide the RJH60D2DPP-M0#T2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJH60D2DPP-M0#T2 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400 600V - 12A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.7 V typ. (at I = 12 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 80 ns typ. (at V = 300 V, V = 15 V, I = 12 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 600 V CES R Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 25 A C Tc = 100C I 12 A C Note1 Collector peak current ic(peak) 50 A Collector to emitter diode forward current i 12 A DF Note1 Collector to emitter diode forward peak current i (peak) 50 A DF Note2 Collector dissipation P 34 W C Note2 Junction to case thermal resistance (IGBT) j-c 3.7 C/W Note2 Junction to case thermal resistance (Diode) j-cd 4.9 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0160EJ0400 Rev.4.00 Page 1 of 9 Apr 19, 2012 RJH60D2DPP-M0 Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown V 600 V I =10 A, V = 0 BR(CES) C GE voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.7 2.2 V I = 12 A, V = 15 V CE(sat) C GE Note3 V 2.2 V I = 25 A, V = 15 V CE(sat) C GE Input capacitance Cies 430 pF V = 25 V CE V = 0 Output capacitance Coes 40 pF GE f = 1 MHz Reveres transfer capacitance Cres 12 pF Total gate charge Qg 19 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 4 nC I = 12 A C Gate to collector charge Qgc 7 nC Turn-on delay time t 32 ns V = 300 V d(on) CC V = 15 V Rise time t 13 ns GE r I = 12 A C Turn-off delay time t 85 ns d(off) Rg = 5 Fall time t 80 ns f Inductive load Turn-on energy E 0.10 mJ on Turn-off energy E 0.16 mJ off Total switching energy E 0.26 mJ total Short circuit withstand time t 3.0 5.0 s V 360 V, V = 15 V sc CC GE Note3 FRD Forward voltage V 1.2 1.6 V I = 12 A F F FRD reverse recovery time t 100 ns I = 12 A rr F di /dt = 100 A/ s FRD reverse recovery charge Q 0.2 C F rr FRD peak reverse recovery current I 5.0 A rr Notes: 3. Pulse test. R07DS0160EJ0400 Rev.4.00 Page 2 of 9 Apr 19, 2012

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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