Preliminary Datasheet RJH60D2DPP-M0 R07DS0160EJ0400 600V - 12A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.7 V typ. (at I = 12 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 80 ns typ. (at V = 300 V, V = 15 V, I = 12 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 600 V CES R Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 25 A C Tc = 100C I 12 A C Note1 Collector peak current ic(peak) 50 A Collector to emitter diode forward current i 12 A DF Note1 Collector to emitter diode forward peak current i (peak) 50 A DF Note2 Collector dissipation P 34 W C Note2 Junction to case thermal resistance (IGBT) j-c 3.7 C/W Note2 Junction to case thermal resistance (Diode) j-cd 4.9 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0160EJ0400 Rev.4.00 Page 1 of 9 Apr 19, 2012 RJH60D2DPP-M0 Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown V 600 V I =10 A, V = 0 BR(CES) C GE voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.7 2.2 V I = 12 A, V = 15 V CE(sat) C GE Note3 V 2.2 V I = 25 A, V = 15 V CE(sat) C GE Input capacitance Cies 430 pF V = 25 V CE V = 0 Output capacitance Coes 40 pF GE f = 1 MHz Reveres transfer capacitance Cres 12 pF Total gate charge Qg 19 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 4 nC I = 12 A C Gate to collector charge Qgc 7 nC Turn-on delay time t 32 ns V = 300 V d(on) CC V = 15 V Rise time t 13 ns GE r I = 12 A C Turn-off delay time t 85 ns d(off) Rg = 5 Fall time t 80 ns f Inductive load Turn-on energy E 0.10 mJ on Turn-off energy E 0.16 mJ off Total switching energy E 0.26 mJ total Short circuit withstand time t 3.0 5.0 s V 360 V, V = 15 V sc CC GE Note3 FRD Forward voltage V 1.2 1.6 V I = 12 A F F FRD reverse recovery time t 100 ns I = 12 A rr F di /dt = 100 A/ s FRD reverse recovery charge Q 0.2 C F rr FRD peak reverse recovery current I 5.0 A rr Notes: 3. Pulse test. R07DS0160EJ0400 Rev.4.00 Page 2 of 9 Apr 19, 2012