AEC-Q101 Qualified Medium power transistor (60V, 0.5A) 2SC5876FRA Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 4) Complements the 2SA2088FRA2SA2088 0.1Min. Each lead has same dimensions (1)Emitter (2)Base Abbreviated symbol : VS (3)Collector Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code T106 Basic ordering unit 3000 (pieces) 2SC5876FRA2SC5876 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V VCEO 60 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 0.5 A Collector current 1 ICP 1.0 A 2 Power dissipation PC 200 mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw=10ms 2 Each terminal mounted on a recommended land. www.rohm.com 1/3 2011.03 - Rev.B c 2011 ROHM Co., Ltd. All rights reserved. 0.3 0.15 (3) (2) ( ) 1 0.2 0.7 0.65 0.65 0.9 1.3 2.0 2SC5876FRA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collectorbase breakdown voltage BVCBO 60 V IC=100A Collectoremitter breakdown voltage BVCEO V IC=1mA 60 BVEBO 6 V Emitterbase breakdown voltage IE=100A Collector cut-off current 1.0 A VCB=40V ICBO Emitter cut-off current IEBO 1.0 A VEB=4V Collectoremitter staturation voltage VCE(sat) 150 300 mV IC=100mA, IB=10mA DC current gain 120 390 VCE=2V, IC=50mA hFE 1 Transition frequency fT 300 MHz VCE=10V, IE= 100mA, f=10MHz pF Collector output capacitance 5 VCB=10V, IE=0mA, f=1MHz Cob Turn-on time ns ton 70 IC=500mA, IB1=50mA ns Storage time tstg 130 IB2= 50mA 1 ns Fall time VCC 25V tf 80 1 Pulse measurement hFE RANK QR 120-270 180-390 Electrical characteristic curves 1000 1000 1000 VCE=2V Ta=25C Ta=25C VCC=25V Ta=125C VCE=5V IC/IB=10/1 Tstg 100 Ta=25C 100 VCE=2V Ta= 40C VCE=3V Tf 100 Ton 10 10 10 1 1 0.01 0.1 1 10 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Switching Time Fig.2 DC current gain vs. collector Fig.3 DC current gain vs. collector current current 10 10 10 Ta=25C IC/IB=10/1 IC/IB=10/1 Ta= 40C 1 1 1 Ta=125C Ta=25C Ta=125C IC/IB=20/1 0.1 0.1 0.1 Ta=25C IC/IB=10/1 Ta= 40C 0.01 0.01 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter saturation voltage Fig.4 Collector-emitter saturation voltage Fig.5 Collector-emitter saturation voltage vs. collector current vs. collector current vs. collector current www.rohm.com 2011.03 - Rev .B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. COLLECTOR SATURATION SWITCHING TIME (ns) VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) DC CURRENT GAIN : hFE BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V)