RB521CS-30GT2RA ROHM

Schottky barrier diode RB521CS-30 z Applications z Dimensions (Unit : mm) z Land size figure (Unit : mm) Low current rectification z Features 1) Ultra Small power mold type (VMN2) 2) Low V F 3) High reliability z Structure z Structure Silicon epitaxial planer z Taping dimensions (Unit : mm) z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (DC) V 30 V R Average rectifierd forward current Io 100 mA Forward current surge peak (60Hz/1cyc) I 500 mA FSM Junction temperature 150 Tj C Storage temperature -40 to +150 Tstg C z Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward vpltage V - - 0.35 V I =10mA F F Reverse current V =10V I - - 10 A R R www.rohm.com 2009.12 - Rev.B 1/3 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs RB521CS-30 Data Sheet z Electrical characteristic curves 100 1000 10000 f=1MH Ta=125 C Ta=125 C 100 1000 Ta=75 C Ta=75 C 10 100 Ta= 25C Ta=25 C 1 10 10 Ta=25 C 0.1 1 Ta=-25 C 0.01 0.1 0.001 0.01 1 0 100 200 300 400 500 600 010 20 30 0 5 10 15 20 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R F R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 20 30 300 Ta=25 C Ta=25 Ta=25 C 19 V =10V f=1MHz I =10mA R F 25 18 V =0V 290 n=30pcs R n=30pcs n=10pcs 17 20 16 280 15 15 14 270 10 13 AVE:2.017uA AVE:17.34pF 12 260 AVE:270.2mV 5 11 10 0 250 V DISPERSION MAP I DISPERSION MAP F Ct DISPERSION MAP R 20 10 10 1cyc Ifsm Ifsm Ifsm 15 t 8.3ms 8.3ms 8.3ms 1cyc 10 5 5 5 AVE:3.90A 0 0 0 1 10 100 1 10 100 TIME1:t(ms) NUMBER OF CYCLES I DISRESION MAP FSM I -t CHARACTERISTICS I -CYCLE CHARACTERISTICS FSM FSM 0.1 0.1 1000 Rth(j-a) 0.08 0.08 D=1/2 Rth(j-c) DC 0.06 0.06 Sin(=180) 100 Mounted on epoxy board D=1/2 0.04 0.04 IM=10mA I =100mA F DC Sin(=180) 0.02 tim 0.02 1ms 300us 0 0 10 0 0.1 0.2 010 20 30 0.001 0.01 0.1 1 10 100 1000 TIME : t(s) AVERAGE RECTIFIED REVERSE VOLTAGE : V (V) R Rth-t CHARACTERISTICS FORWARD CURRENT : Io(A) V -P CHARACTERISTICS R R Io-Pf CHARACTERISTICS www.rohm.com 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.B Not Recommended for New Designs PEAK SURGE FORWARD VOLTAGE:V (mV) F TRANSIENT FORWARD CURRENT:I (A) FSM FORWARD CURRENT:I (mA) F THAERMAL IMPEDANCE:Rth (C/W) FORWARD POWER REVERSE CURRENT:I (uA) R DISSIPATION:Pf(W) PEAK SURGE REVERSE CURRENT:I (uA) R FORWARD CURRENT:I (A) FSM REVERSE POWER DISSIPATION:PR (W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD CURRENT:I (A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FSM