X-On Electronics has gained recognition as a prominent supplier of RPT-38PT3F Phototransistors across the USA, India, Europe, Australia, and various other global locations. RPT-38PT3F Phototransistors are a product manufactured by ROHM. We provide cost-effective solutions for Phototransistors, ensuring timely deliveries around the world.

RPT-38PT3F ROHM

RPT-38PT3F electronic component of ROHM
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See Product Specifications
Part No.RPT-38PT3F
Manufacturer: ROHM
Category: Phototransistors
Description: ROHM Semiconductor Phototransistors CLEAR PHOTOTRANS VISIBLE RAY CUT
Datasheet: RPT-38PT3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7291 ea
Line Total: USD 0.73 
Availability - 63
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
63
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.4681
100 : USD 0.337
500 : USD 0.299
24000 : USD 0.2944
50000 : USD 0.2875

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Maximum On-State Collector Current
Mounting Style
Peak Wavelength
Collector- Emitter Voltage VCEO Max
Dark Current
Rise Time
Fall Time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Type
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Half Intensity Angle Degrees
Hts Code
Mxhts
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Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RPT-38PT3F from our Phototransistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RPT-38PT3F and other electronic components in the Phototransistors category and beyond.

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RPT-38PT3F Sensors Phototransistor, top view type RPT-38PT3F RPT-38PT3F is photo transistor of the top view type. Molded with transparent resin, and can be used for visible light source. Also, can be used for illuminance sensor. z External dimensions (Unit : mm) z Application Optical control equipment Illuminance sensor. Notes: 1. Unspecified tolerance +0.1 shall be 0.2 . 3.4 0.3 2. Dimension in parenthesis are 3.10.2 show for reference. z Features 1) High sensitivity. 40.6 2) It can be used for visible light source. 2 0.5 2 1 Internal connection diagram (2.5) 1 2 Emitter Collector z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-emitter voltage VCEO 32 V Emitter-collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating temperature Topr 25 to +85 C Storage temperature Tstg 30 to +100 C z Electrical and optical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Light current IC 2.0 mA VCE=5V, E=500LX Dark current ICEO 0.5 A VCE=10V(Black box) Peak sensitivity wavelength P 800 nm Collector-emitter saturation voltage VCE(sat) 0.4 V IC=1mA, E=500LX Half-angle 1 / 2 36 deg Response time trtf 10 s VCC=5V, IC=1mA, RL=100 1/2 Max.1 1.1 2.51 Min.24 5.20.3RPT-38PT3F Sensors z Electrical and optical characteristic curves 1000 8 VCE=5V 500 1000 6 100 200 VCE=10V VCE=20V 100 4 VCE=30V 10 50 1 2 20 0.1 10 25 0 25 50 75 100 0 250 500 750 1000 1250 25 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (C) ILLUMINANCE : E (Lx) AMBIENT TEMPERATURE : Ta (C) Fig.2 Relative output Fig.3 Light current vs. irradiance Fig.1 Dark current vs. ambient temperature vs. ambient temperature 120 10 100 160 8 E=1000Lux 80 120 6 750Lux 60 80 4 500Lux 40 40 2 250Lux 20 0 0 0 02 4 6 8 10 12 14 16 400 600 800 1000 25 0 25 50 75 100 COLLECTOREMITTER VOLTAGE : VCE (V) OPTICAL WAVELENGTH : (nm) AMBIENT TEMPERATURE : Ta (C) Fig.4 Output characteristics Fig.5 Spectral sensitivity Fig.6 Collector dissipation vs. ambient temperature 1000 0 10 Ta=25C 100 20 VCE=5V 30 40 80 100 50 60 RL=1k 60 40 RL=500 10 70 20 RL=100 80 1 90 0.1 110 100 80 60 40 20 10 20 30 40 50 60 70 80 90 0 COLLECTOR CURRENT : IC (mA) RELATIVE LUMINOUS INTENSITY (%) ANGULAR DISPLACEMENT (deg) Fig.7 Response time vs. Fig.8 Directional pattern collector current 2/2 LIGHT CURRENT : IC (mA) DARK CURRENT : ICEO (nA) RESPONSE TIME : tr (s) RELATIVE SENSITIVITYT : IC (%) RELATIVE LIGHT CURRENT : IC (%) LIGHT CURRENT : IC (mA) COLLECTOR DISSIPATION : PC (mW) RELATIVE LUMINOUS INTENSITY (%)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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