UMF9N Transistors Power management (dual transistors) UMF9N 2SC5585 and 2SK3019 are housed independently in a UMT package. z Dimensions (Units : mm) z Application Power management circuit z Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 1.25 2.1 z Structure Silicon epitaxial planar transistor 0.1Min. ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88 z Equivalent circuits (3) (2) (1) Tr1 Tr2 (4) (5) (6) z Packaging specifications Type UMF9N Package UMT6 Marking F9 Code TR Basic ordering unit (pieces) 3000 Rev.A 1/5 0.2 0.15 ( ) 5 ( ) ( ) 4 6 0 0.1 ~ (1) (3) (2) 0.65 0.65 0.7 1.3 0.9 2.0UMF9N Transistors z Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V VCEO 12 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 500 mA Collector current 1 ICP 1.0 A 2 Power dissipation PC 150(TOTAL) mW Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Tr2 Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V VGSS 20 V Gate-source voltage Continuous ID 100 mA Drain current 1 Pulsed IDP 200 mA Continuous IDR 100 mA Reverse drain 1 current Pulsed IDRP 200 mA 2 Total power dissipation PD 150(TOTAL) mW Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 PW10ms Duty cycle50% 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. z Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 12 V IC=1mA Collector-base breakdown voltage BVCBO 15 V IC=10A Emitter-base breakdown voltage BVEBO 6 V IE=10A Collector cut-off current ICBO 100 nA VCB=15V Emitter cut-off current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 100 250 mV IC=200mA, IB=10mA DC current gain hFE 270 680 VCE=2V, IC=10mA Transition frequency fT 320 MHz VCE=2V, IE=10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Collector output capacitance Cob 7.5 pF Tr2 Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 1 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 30 V ID=10A, VGS=0V Zero gate voltage drain current IDSS 1.0 A VDS=30V, VGS=0V Gate-threshold voltage VGS(th) 0.8 1.5 VVDS=3V, ID=100A 58 ID=10mA, VGS=4V Static drain-source RDS(on) on-state resistance 713 ID=1mA, VGS=2.5V Yfs Forward transfer admittance 20 ms VDS=3V, ID=10mA Input capacitance Ciss 13 pF Output capacitance Coss 9 pF VDS=5V, VGS=0V, f=1MHz Reverce transfer capacitance Crss 4 pF Turn-on delay time td(on) 15 ns ID=10mA, VDD 5V, Rise time tr 35 ns VGS=5V, RL=500, Turn-off delay time td(off) 80 ns RGS=10 Fall time tf 80 ns Rev.A 2/5