IRF820, SiHF820
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
V (V) 500
DS
Available
Repetitive Avalanche Rated
R ( )V = 10 V 3.0
DS(on) GS
RoHS*
Fast Switching
Q (Max.) (nC) 24
g COMPLIANT
Ease of Paralleling
Q (nC) 3.3
gs
Q (nC) 13 Simple Drive Requirements
gd
Configuration Single
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
D
Third generation Power MOSFETs from Vishay provide the
TO-220AB
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220AB package is universally preferred for
commercial-industrial applications at power dissipation
S levels to approximately 50 W. The low thermal resistance
D
and low package cost of the TO-220AB contribute to its
G S
wide acceptance throughout the industry.
N-Channel MOSFET
ORDERING INFORMATION
Package TO-220AB
IRF820PbF
Lead (Pb)-free
SiHF820-E3
IRF820
SnPb
SiHF820
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 500
DS
V
Gate-Source Voltage V 20
GS
T = 25 C 2.5
C
Continuous Drain Current V at 10 V I
GS D
T = 100 C 1.6 A
C
a
Pulsed Drain Current I 8.0
DM
Linear Derating Factor 0.40 W/C
b
Single Pulse Avalanche Energy E 210 mJ
AS
a
Repetitive Avalanche Current I 2.5 A
AR
a
Repetitive Avalanche Energy E 5.0 mJ
AR
Maximum Power Dissipation T = 25 C P 50 W
C D
c
Peak Diode Recovery dV/dt dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range T , T - 55 to + 150
J stg
C
d
Soldering Recommendations (Peak Temperature) for 10 s 300
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 N m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V = 50 V, starting T = 25 C, L = 60 mH, R = 25 , I = 2.5 A (see fig. 12).
DD J g AS
c. I 2.5 A, dI/dt 50 A/s, V V , T 150 C.
SD DD DS J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91059 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820, SiHF820
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum Junction-to-Ambient R -62
thJA
Case-to-Sink, Flat, Greased Surface R 0.50 - C/W
thCS
Maximum Junction-to-Case (Drain) R -2.5
thJC
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V
DS GS D
V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C
DS DS J D
Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V
GS(th) DS GS D
Gate-Source Leakage I V = 20 V - - 100 nA
GSS GS
V = 500 V, V = 0 V - - 25
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = 400 V, V = 0 V, T = 125 C - - 250
DS GS J
b
Drain-Source On-State Resistance R V = 10 V I = 1.5 A -- 3.0
DS(on) GS D
Forward Transconductance g V = 50 V, I = 1.5 A 1.5 - - S
fs DS D
Dynamic
Input Capacitance C - 360 -
iss
V = 0 V,
GS
Output Capacitance C -9V = 25 V, 2- pF
oss DS
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance C -37-
rss
Total Gate Charge Q -- 24
g
I = 2.1 A, V = 400 V,
D DS
Gate-Source Charge Q --V = 10 V 3.3 nC
gs GS b
see fig. 6 and 13
Gate-Drain Charge Q --13
gd
Turn-On Delay Time t -8.0 -
d(on)
Rise Time t -8.6 -
r
V = 250 V, I = 2.1 A,
DD D
ns
b
R = 18 , R = 100 , see fig. 10
g D
Turn-Off Delay Time t -33-
d(off)
Fall Time t -16-
f
D
Between lead,
Internal Drain Inductance L -4.5 -
D
6 mm (0.25") from
nH
package and center of
G
die contact
Internal Source Inductance L -7.5 -
S
S
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous Source-Drain Diode Current I -- 2.5
S
showing the
A
integral reverse
G
a
Pulsed Diode Forward Current I p - n junction diode -- 8.0
SM
S
b
Body Diode Voltage V T = 25 C, I = 2.5 A, V = 0 V -- 1.6 V
SD J S GS
Body Diode Reverse Recovery Time t - 260 520 ns
rr
T = 25 C, I = 2.1 A, dI/dt = 100 A/s
J F
Body Diode Reverse Recovery Charge Q -0.7 1.4 nC
rr
Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L )
on S D
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
www.vishay.com Document Number: 91059
2 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000