SKM100GAL17E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1700 V CES j I T =25C 164 A C c T = 175 C j T =80C 127 A c I 100 A Cnom I I = 3xI 300 A CRM CRM Cnom V -20 ... 20 V GES V = 1000 V CC SEMITRANS 2 t V 15 V T =150 C 10 s psc GE j V 1700 V CES T -40 ... 175 C j IGBT4 Modules Inverse diode I T =25C 113 A F c T = 175 C j SKM100GAL17E4 T =80C 83 A c I 100 A Fnom I I = 2xI 200 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 650 A FSM p j IGBT4 = 4. generation medium fast T -40 ... 175 C j trench IGBT (Infineon) Freewheeling diode CAL4 = Soft switching 4. Generation CAL-Diode I T =25C 113 A c F T = 175 C j Insulated copper baseplate using DBC T =80C 83 A c Technology (Direct Copper Bonding) I 100 A Fnom With integrated Gate resistor I I = 2xI 200 A For switching frequenzies up to 8kHz FRM FRM Fnom UL recognized, file no. E63532 I t = 10 ms, sin 180, T =25C 650 A p j FSM T -40 ... 175 C j Typical Applications* Module Electronic welders DC/DC converter I 200 A t(RMS) Brake chopper T -40 ... 125 C stg Switched reluctance motor V AC sinus 50 Hz, t = 1 min 4000 V isol Remarks Characteristics Case temperature limited to T = 125C max. c Symbol Conditions min. typ. max. Unit Recommended T = -40 ... +150C op IGBT Product reliability results valid I =100A for T = 150C j V C T =25C 1.90 2.20 V CE(sat) j V =15V GE T =150 C 2.30 2.60 V j chiplevel V T =25C 0.8 0.9 V j CE0 chiplevel T =150 C 0.7 0.8 V j r T =25C 11 13 m V =15V j CE GE chiplevel T =150 C 16 18 m j V V =V , I = 4 mA 5.2 5.8 6.4 V GE(th) GE CE C I T =25 C 1mA V =0 V j CES GE V = 1700 V CE T =150 C mA j C f=1MHz 9nF ies V =25V CE C f=1MHz 0.34 nF oes V =0 V GE C f=1MHz 0.29 nF res Q V = - 8 V...+ 15 V 800 nC GE G R T =25C 7.5 j Gint GAL by SEMIKRON Rev. 2.0 24.06.2015 1SKM100GAL17E4 Characteristics Symbol Conditions min. typ. max. Unit V = 1200 V t CC T =150 C 234 ns j d(on) I =100A C t T =150 C 39 ns j r V = +15/-15 V GE E T =150 C 43 mJ j on R =2 G on t T =150 C 657 ns j d(off) R =2 G off di/dt = 2540 A/s t T =150 C 136 ns on j f di/dt =610 A/s off du/dt = 5430 V/s T =150 C E 39 mJ off j SEMITRANS 2 R per IGBT 0.234 K/W th(j-c) Inverse diode I = 100 A V = V F T =25C 2.00 2.40 V j F EC IGBT4 Modules V =0V GE T =150 C 2.15 2.57 V j chiplevel V T =25C 1.32 1.56 V F0 j chiplevel SKM100GAL17E4 T =150 C 1.08 1.22 V j r T =25C 6.8 8.4 m F j chiplevel T =150 C 11 14 m j Features I = 100 A I F T =150 C 86 A RRM j IGBT4 = 4. generation medium fast di/dt =2360A/s off Q T =150 C 34 C rr j trench IGBT (Infineon) V =-15V GE CAL4 = Soft switching 4. Generation E T =150 C 26 mJ j rr V = 1200 V CC CAL-Diode R per diode 0.504 K/W th(j-c) Insulated copper baseplate using DBC Freewheeling diode Technology (Direct Copper Bonding) I = 100 A With integrated Gate resistor V = V F T =25C 2.00 2.40 V j F EC V =0V For switching frequenzies up to 8kHz GE T =150 C 2.15 2.57 V j chiplevel UL recognized, file no. E63532 V T =25C 1.32 1.56 V F0 j Typical Applications* chiplevel T =150 C 1.08 1.22 V j Electronic welders r T =25C 6.8 8.4 m F j DC/DC converter chiplevel T =150 C 10.7 13.5 m Brake chopper j I = 100 A Switched reluctance motor I F T =150 C 86 A RRM j di/dt =2360A/s off Q T =150 C 34 C rr j Remarks V =15V GE E T =150 C 26 mJ j Case temperature limited rr V = 1200 V CC to T = 125C max. c R per Diode 0.504 K/W th(j-c) Recommended T = -40 ... +150C op Module Product reliability results valid L 30 nH for T = 150C CE j R T =25C 0.65 m C CC +EE terminal-chip T =125 C 1.09 m C R per module 0.04 0.05 K/W th(c-s) M to heat sink M6 3 5 Nm s M to terminals M5 2.5 5 Nm t Nm w 160 g GAL 2 Rev. 2.0 24.06.2015 by SEMIKRON