3STR1630 STMicroelectronics

3STR1630 Low voltage high performance NPN power transistor Features Very low collector-emitter saturation voltage 3 High current gain characteristic Fast switching speed Miniature SOT-23 plastic package 2 ECOPACK 2 grade for surface mounting 1 circuits SOT-23 Applications Strobe and LED drives Motor and relay drives Figure 1. Internal schematic diagram DC-DC converters Description This device is an NPN transistor manufactured using low voltage planar technology with a double-metal process. Table 1. Device summary Order code Marking Package Packing 3STR1630 1630 SOT-23 Tape and reel June 2011 Doc ID 16600 Rev 3 1/10 www.st.com 10Electrical ratings 3STR1630 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 30 V CES BE V Collector-emitter voltage (I = 0) 30 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 6 A C I Collector peak current (t < 5 ms) 12 A CM P P Total dissipation at T = 25 C 0.5 W TOT amb T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-ambient max 250 C/W thJA 1. Device mounted on PCB area of 1 cm. 2/10 Doc ID 16600 Rev 3