MJD122T4 STMicroelectronics

MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications 3 General purpose linear and switching 1 Description DPAK The devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain Figure 1. Internal schematic diagrams performance coupled with very low saturation voltage. NPN: R = 7 K PNP: R = 16 K 1 1 R = 70 R = 60 2 2 Table 1. Device summary Order codes Marking Polarity Package Packaging MJD122T4 MJD122 NPN DPAK Tape and reel MJD127T4 MJD127 PNP April 2009 Doc ID 3541 Rev 11 1/12 www.st.com 12 Content MJD122, MJD127 Content 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 3541 Rev 11