Product Information

MJD122T4

MJD122T4 electronic component of STMicroelectronics

Datasheet
Transistors Darlington NPN Power Darlington
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2561 ea
Line Total: USD 640.25

7275 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 2500  Multiples: 2500
Pack Size: 2500

 More Buying Options & Price Grid(s)

Availability Price Quantity
7275 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 2500
Multiples : 2500

Stock Image

MJD122T4
STMicroelectronics

2500 : USD 0.2561
5000 : USD 0.2561
7500 : USD 0.2561
10000 : USD 0.2561
12500 : USD 0.2561

486 - WHS 2


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

MJD122T4
STMicroelectronics

1 : USD 0.572
10 : USD 0.4612
30 : USD 0.4148
100 : USD 0.3545
500 : USD 0.3283
1000 : USD 0.3121

5084 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

MJD122T4
STMicroelectronics

1 : USD 1.066
3 : USD 0.9581
10 : USD 0.9321
25 : USD 0.767
48 : USD 0.3471

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Brand Category
LoadingGif

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Additional Infomation About Product

MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications 3 General purpose linear and switching 1 Description DPAK The devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain Figure 1. Internal schematic diagrams performance coupled with very low saturation voltage. NPN: R = 7 K PNP: R = 16 K 1 1 R = 70 R = 60 2 2 Table 1. Device summary Order codes Marking Polarity Package Packaging MJD122T4 MJD122 NPN DPAK Tape and reel MJD127T4 MJD127 PNP April 2009 Doc ID 3541 Rev 11 1/12 www.st.com 12 Content MJD122, MJD127 Content 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 3541 Rev 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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