PBYR2045CT STMicroelectronics

STPS2045C Power Schottky rectifier Datasheet production data Features Very small conduction losses . Negligible switching losses Extremely fast switching Insulated package: TO-220FPAB Insulating voltage = 2000 V sine RMS . Capacitance = 12 pF % 2 )3 7 2 % 7 . Avalanche rated . Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC . 3 . ,3 . converters. Packaged either in TO-220AB, TO-220FPAB, 2 2 I PAK, or D PAK, this device is especially intended for use in low voltage, high frequency Table 1. Device summary inverters, free wheeling and polarity protection Symbol Value applications. I 2 x 10 A F(AV) V 45 V RRM T 175 C j(max) V 0.57 V F(typ) August 2015 DocID3506 Rev 9 1/14 This is information on a product in full production. www.st.com 14Characteristics STPS2045C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) TO-220AB 2 D PAK T = 155 C Per diode 10 c 2 I PAK I Average forward current = 0.5 A F(AV) TO- T = 125 C Per device 20 c 220FPAB I Surge non repetitive forward current t = 10 ms sinusoidal 180 A FSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 280 W ARM j p (2) V Maximum repetitive peak avalanche voltage ARM t < 10 s, T < 125 C, I < 7.7 A 60 V p j AR (2) V Maximum single-pulse peak avalanche voltage ASM T Storage temperature range -65 to + 175 C stg (3) T Maximum operating junction temperature 175 C j 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 2. See Figure 9 1 dPtot < 3. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistances parameters Symbol Parameter Value Unit Per diode 2.2 2 2 TO-220AB / D PAK / I PAK Total 1.4 R Junction to case C/W th(j-c) Per diode 4.5 TO-220FPAB Total 3.5 2 2 TO-220AB / D PAK / I PAK 0.4 R Coupling Coupling C/W th(c) TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (per diode) + P(diode2) x R j th(j-c) th(c) 2/14 DocID3506 Rev 9