X-On Electronics has gained recognition as a prominent supplier of SSM3J328R,LF(T MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J328R,LF(T MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J328R,LF(T Toshiba

SSM3J328R,LF(T electronic component of Toshiba
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Part No.SSM3J328R,LF(T
Manufacturer: Toshiba
Category: MOSFETs
Description: Trans MOSFET P-CH 20V 6A 3-Pin SOT-23F
Datasheet: SSM3J328R,LF(T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1655 ea
Line Total: USD 496.5 
Availability - 20370
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
20370
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1655
6000 : USD 0.1637
9000 : USD 0.1621
12000 : USD 0.1603
15000 : USD 0.1589
30000 : USD 0.1571

2647
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 182
Multiples : 1
182 : USD 0.2243
200 : USD 0.2227
500 : USD 0.169
1000 : USD 0.1642

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Operating Temperature Classification
Operating Temp Range
Type
Gate-Source Voltage Max
Package Type
Number Of Elements
Drain-Source On-Volt
Rad Hardened
Pin Count
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3J328R,LF(T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J328R,LF(T and other electronic components in the MOSFETs category and beyond.

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SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J328R Power Management Switch Applications Unit: mm +0.08 1.5-V drive 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 Low ON-resistance: R = 88.4m (max) ( V = -1.5 V) DS(ON) GS 3 R = 56.0m (max) ( V = -1.8 V) DS(ON) GS R = 39.7m (max) ( V = -2.5 V) DS(ON) GS R = 29.8m (max) ( V = -4.5 V) DS(ON) GS 1 2 Absolute Maximum Ratings (Ta = 25C) 0.95 0.95 Characteristic Symbol Rating Unit 2.90.2 A Drain-source voltage V -20 V DSS Gate-source voltage V 8 V GSS DC I (Note 1) -6.0 D Drain current A Pulse I (Note 1,2) -24.0 DP 1: Gate P (Note 3) 1 D Power dissipation W 2: Source t = 10s 2 3: Drain Channel temperature T 150 C ch SOT-23F Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3Z1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 11 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: PW10s,Duty1 Note 3: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top view) 3 3 KFH 1 2 1 2 1 2010-11-11 1.80.1 2.40.1 +0.08 0.8 -0.05SSM3J328R Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V (Note 5) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 4) 4.5 9.1 S fs DS D I = -3.0 A, V = -4.5 V (Note 4) 24.9 29.8 D GS I = -2.5 A, V = -2.5 V (Note 4) 31.1 39.7 D GS Drainsource ON-resistance R m DS (ON) I = -1.5 A, V = -1.8 V (Note 4) 38.8 56.0 D GS I = -0.5 A, V = -1.5 V (Note 4) 47.4 88.4 D GS Input capacitance C 840 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 118 oss f = 1 MHz Reverse transfer capacitance C 99 rss Total gate charge Q 12.8 g V = -10 V, I = -4.0 A, DD DS Gate-source charge Q 1.4 nC gs1 V = -4.5 V GS Gate-drain charge Q 3.0 gd Turn-on time t V = -10 V, I = -2.0 A 32 on DD D Switching time ns Turn-off time t V = 0 to -2.5 V, R = 4.7 107 GS G off Drain-Source forward voltage V I = 6.0 A, V = 0 V (Note 4) 0.87 1.2 V DSF D GS Note4: Pulse test Note5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit 0 V (b) V IN 90% OUT 0 IN 10% 2.5 V 2.5V R L (c) V OUT V DS (ON) 90% 10 s V DD V = -10 V DD 10% R = 4.7 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM3J328R). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2010-11-11 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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