SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : R = 20 (max) ( V = 1.2 V) on GS : R = 8 (max) ( V = 1.5 V) on GS : R = 4 (max) ( V = 2.5 V) on GS : R = 3 (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drainsource voltage V 20 V DSS Gatesource voltage V 10 V GSS DC I 180 D Drain current mA Pulse I 360 DP Drain power dissipation P (Note 1) 100 mW D Channel temperature T 150 C ch JEDEC - Storage temperature T 55 to 150 C stg JEITA - Note: Using continuously under heavy loads (e.g. the application of high CST3 temperature/current/voltage and the significant change in TOSHIBA 2-1J1B temperature, etc.) may cause this product to decrease in the Weight: 0.75 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (10 mm 10 mm 1.0 mm, Cu Pad: 100 mm ) Marking (top view) Pin Condition (top view) Equivalent Circuit (top view) Polarity mark Polarity mark (on the top) 3 1 3 1 SD 2 2 1. Gate 2. Source 3. Drain Start of commercial production *Electrodes: on the bottom 2008-02 1 2014-03-01 SSM3K35CT Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0V 10 A GSS GS DS Drainsource breakdown voltage V I = 0.1 mA, V = 0V 20 V (BR) DSS D GS Drain cutoff current I V = 20 V, V = 0V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 mA 0.4 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 50 mA (Note 2) 115 mS fs DS D I = 50 mA, V = 4 V (Note 2) 1.5 3 D GS I = 50 mA, V = 2.5 V (Note 2) 2 4 D GS Drainsource ON-resistance R DS (ON) I = 5 mA, V = 1.5 V (Note 2) 3 8 D GS I = 5 mA, V = 1.2 V (Note 2) 5 20 D GS Input capacitance C 9.5 iss Reverse transfer capacitance C V = 3 V, V = 0V, f = 1 MHz 4.1 pF rss DS GS Output capacitance C 9.5 oss Turn-on time t 115 on V = 3 V, I = 50 mA, DD D Switching time ns V = 0 to 2.5 V GS Turn-off time t 300 off Drainsource forward voltage V I = - 180 mA, V = 0V (Note 2) -0.9 -1.2 V DSF D GS Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V OUT 90% 2.5 V IN 10% 0 R 0 V L 10 s V DD (c) V V OUT DD 10% V = 3 V DD Duty 1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM3K35CT). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 50