SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Unit: mm AEC-Q101 qualified (Note 1) 1.20.05 Compact package suitable for high-density mounting 0.80.05 Low ON-resistance : RDS(ON) = 4.0 (max) ( VGS = 4 V) : RDS(ON) = 7.0 (max) ( VGS = 2.5 V) 1 Note 1: For detail information, please contact to our sales. 3 Absolute Maximum Ratings (Ta = 25C) 2 Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS DC I 100 D 1. Gate Drain current mA 2. Source Pulse I 200 DP VESM 3. Drain Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch JEDEC Storage temperature T 55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-1L1B temperature, etc.) may cause this product to decrease in the Weight: 1.5 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm 25.4 mm 1.6 mm) 0.5mm 0.45mm Marking Equivalent Circuit 0.45mm 3 3 0.4mm N T 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear ant-sitatic clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2009-12 1 2018-05-17 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05SSM3K44MFV Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 14 V, V = 0 V 1 A GSS GS DS Drain-source breakdown voltage V I = 0.1 mA, V = 0 V 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 25 mS fs DS D I = 10 mA, V = 4 V 2.2 4.0 D GS Drain-Source on-resistance R DS (ON) I = 10 mA, V = 2.5 V 4.0 7.0 D GS Input capacitance C 8.5 iss Reverse transfer capacitance C V = 3 V, V = 0 V, f = 1 MHz 5.3 pF rss DS GS Output capacitance C 9.4 oss Turn-on time t 50 on V = 5 V, I = 10 mA, DD D Switching time ns V = 0 to 5 V GS Turn-off time t 200 off Switching Time Test Circuit (a) Test circuit (b) VIN 5 V Output 90% 5 V Input 10% 0 R L 0 V 10 s V DD (c) VOUT V DD 10% V = 5 V DD Duty 1% 90% Input: t , t < 5 ns r f V DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as the voltage between gate and source when the low operating current value is I 100 A for th D = this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration when using the device. 2 2018-05-17 50