SSM6L56FE MOSFETs Silicon P-/N-Channel MOS SSM6L56FESSM6L56FESSM6L56FESSM6L56FE 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.5-V drive (2) Low drain-source on-resistance Q1 N-channel: R = 235 m (max) ( V = 4.5 V, I = 800 mA) DS(ON) GS D R = 300 m (max) ( V = 2.5 V, I = 600 mA) DS(ON) GS D R = 480 m (max) ( V = 1.8 V, I = 200 mA) DS(ON) GS D R = 840 m (max) ( V = 1.5 V, I = 50 mA) DS(ON) GS D Q2 P-channel: R = 390 m (max) ( V = -4.5 V, I = -800 mA) DS(ON) GS D R = 480 m (max) ( V = -2.5 V, I = -500 mA) DS(ON) GS D R = 660 m (max) ( V = -1.8 V, I = -200 mA) DS(ON) GS D R = 900 m (max) ( V = -1.5 V, I = -100 mA) DS(ON) GS D R = 4000 m (max) ( V = -1.2 V, I = -10 mA) DS(ON) GS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ES6 Start of commercial production 2019-05 2017-2019 2019-08-01 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0SSM6L56FE 4. 4. 4. 4. Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note)Absolute Maximum Ratings (Note) 4.1. 4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, TQ1 Absolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) 4.1. 4.1. Q1 Absolute Maximum Ratings (Unless otherwise specified, TQ1 Absolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I 800 mA D Drain current (pulsed) (Note 1) I 1600 DP Note 1: Ensure that the channel temperature does not exceed 150 . 4.2. 4.2. 4.2. 4.2. Q2 Absolute Maximum Ratings (Unless otherwise specified, TQ2 Absolute Maximum Ratings (Unless otherwise specified, TQ2 Absolute Maximum Ratings (Unless otherwise specified, TQ2 Absolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I -800 mA D Drain current (pulsed) (Note 1) I -1600 DP Note 1: Ensure that the channel temperature does not exceed 150 . 4.3. 4.3. Absolute Maximum Ratings (Unless otherwise specified, TAbsolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) 4.3. 4.3. Absolute Maximum Ratings (Unless otherwise specified, TAbsolute Maximum Ratings (Unless otherwise specified, T = 25 = 25 )) aa aa (Q1, Q2 Common)(Q1, Q2 Common) (Q1, Q2 Common)(Q1, Q2 Common) Characteristics Symbol Rating Unit Power dissipation (Note 1) P 150 mW D Power dissipation (Note 2) 250 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on an FR4 board.(total rating) (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.135 mm2 6) Note 2: Device mounted on an FR4 board.(total rating) (25.4 mm 25.4 mm 1.6 mm, Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2017-2019 2019-08-01 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0