X-On Electronics has gained recognition as a prominent supplier of SSM6N44FU,LF MOSFET across the USA, India, Europe, Australia, and various other global locations. SSM6N44FU,LF MOSFET are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SSM6N44FU,LF Toshiba

SSM6N44FU,LF electronic component of Toshiba
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Part No.SSM6N44FU,LF
Manufacturer: Toshiba
Category: MOSFET
Description: MOSFET Sm-signalHiSpeed2n1 US6 SOT-363
Datasheet: SSM6N44FU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4123 ea
Line Total: USD 0.41 
Availability - 59818
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
39206
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ : 1
Multiples : 1
1 : USD 0.3109
10 : USD 0.1899
100 : USD 0.089
1000 : USD 0.0736
3000 : USD 0.0499
9000 : USD 0.0474

   
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We are delighted to provide the SSM6N44FU,LF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM6N44FU,LF and other electronic components in the MOSFET category and beyond.

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SSM6N44FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FU High Speed Switching Applications Unit: mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : R = 4.0 (max) ( V = 4 V) DS(ON) GS : R = 7.0 (max) ( V = 2.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 20 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 200 mW D Channel temperature T 150 C ch JEDEC Storage temperature range T 55 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1C high temperature/current/voltage and the significant change in Weight: 6.8 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit (top view) 6 5 4 6 5 4 Q1 N T Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2010-01 1 2014-03-01 SSM6N44FU Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 14 V, V = 0 V 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 V 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 25 mS fs DS D I = 10 mA, V = 4 V 2.2 4.0 D GS Drain-Source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 4.0 7.0 D GS Input capacitance C 8.5 iss Reverse transfer capacitance C V = 3 V, V = 0 V, f = 1 MHz 5.3 pF rss DS GS Output capacitance C 9.4 oss Turn-on time t 50 on V = 5 V, I = 10 mA, DD D Switching time ns V = 0 to 5 V GS Turn-off time t 200 off Switching Time Test Circuit (a) Test circuit (b) V IN 5 V OUT 90% 5 V IN 10% 0 0 V 10 s V DD (c) V V OUT DD 10% V = 5 V DD Duty 1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (0.1mA for the th D SSM6N44FU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device. 2 2014-03-01 50 R L

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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