SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low ON resistance : R = 12 (max) ( V = 4 V) on GS : R = 32 (max) ( V = 2.5 V) on GS Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage V 30 V DS Gate-Source voltage V 20 V GSS DC I 100 D Drain current mA Pulse I 200 1: Source1 DP 2: Gate1 Drain power dissipation (Ta = 25C) P 200 mW D (Note 1) 3: Drain2 Channel temperature T 150 C 4: Source2 ch 5: Gate2 Storage temperature range T 55 to 150 C stg 6: Drain1 Note: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2J1C operating temperature/current/voltage, etc.) are within the Weight: 0.0068g(typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating. Marking Equivalent Circuit (top view) 6 5 4 654 Q1 D Q Q2 1 2 3 123 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2002-03 1 2014-03-01 SSM6P15FU Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Symbol Test Condition MIN. TYP. MAX.UNIT Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 1.1 1.7 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 20 mS fs DS D I = 10 mA, V = 4 V 8 12 D GS Drain-Source ON resistance R DS (ON) I = 1 mA, V = 2.5 V 14 32 D GS Input capacitance C 9.1 pF iss Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3.5 pF rss DS GS Output capacitance C 8.6 pF oss Turn-on time t 65 on V = 5 V, I = 10 mA, DD D Switching time ns V = 0 to 5 V GS Turn-off time t 175 off Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 5V R 5 V L 10 s V DD (c) V V OUT DS (ON) 90% V = 5 V DD Duty 1% 10% V : t , t < 5 ns V IN r f DD t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V requires lower voltage GS (on) th GS (off) than V . (Relationship can be established as follows: V < V < V ) th GS (off) th GS (on) Please take this into consideration for using the device. 2 2014-03-01 50