TC74VCX2125FT(SPL) Toshiba

TC74VCX2125FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCX2125FT, TC74VCX2125FK Low Voltage Quad Bus Buffer with 3.6-V Tolerant Inputs and Outputs The TC74VCX2125FT/FK is a high-performance CMOS quad TC74VCX2125FT bus buffer. Designed for use in 1.8-V, 2.5-V or 3.3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. It is also designed with overvoltage tolerant inputs and outputs up to 3.6 V. This device requires the 3-state control input OE to be set high to place the output into the high-impedance state. The 26--series resistor helps reducing output overshoot and undershoot without external resistor. All inputs are equipped with protection circuits against static TC74VCX2125FK discharge. Features 26- -series resistos on outputs. Low-voltage operation: V = 1.8 to 3.6 V CC High-speed operation : t = 3.7 ns (max) (V = 3.0 to 3.6 V) pd CC : t = 4.8 ns (max) (V = 2.3 to 2.7 V) pd CC : t = 9.6 ns (max) (V = 1.8 V) Weight pd CC TSSOP14-P-0044-0.65A : 0.06 g (typ.) Output current : I /I = 12 mA (min) (V = 3.0 V) OH OL CC VSSOP14-P-0030-0.50 : 0.02 g (typ.) : I /I = 8 mA (min) (V = 2.3 V) OH OL CC : I /I = 4 mA (min) (V = 1.8 V) OH OL CC Latch-up performance: 300 mA ESD performance: Machine model 200 V Human body model 2000 V Package: TSSOP and VSSOP (US) 3.6-V tolerant function and power-down protection provided on all inputs and outputs Start of commercial production 1999-07 1 2014-03-01 TC74VCX2125FT/FK Pin Assignment (top view) IEC Logic Symbol 1 1OE EN 3 1Y 1OE 1 14 V 2 CC 1A 4 2OE 6 1A 2 13 4OE 2Y 5 2A 10 1Y 3 12 4A 3OE 8 3Y 9 3A 2OE 4 11 4Y 13 4OE 11 4Y 12 4A 2A 5 10 3OE 2Y 6 9 3A GND 7 8 3Y Truth Table Inputs Outputs OE A Y H X Z L L L L H H X: Dont care Z: High impedance Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Power supply voltage V 0.5 to 4.6 V CC DC input voltage V 0.5 to 4.6 V IN 0.5 to 4.6 (Note 2) DC output voltage V V OUT 0.5 to V + 0.5 CC (Note 3) Input diode current I 50 mA IK Output diode current I 50 (Note 4) mA OK DC output current I 50 mA OUT Power dissipation P 180 mW D DC V /ground current I /I 100 mA CC CC GND Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: OFF state Note 3: High or low state. I absolute maximum rating must be observed. OUT Note 4: V < GND, V > V OUT OUT CC 2 2014-03-01