TCKE712BNL TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCKE712BNL 13.2 V, eFuse with Adjustable Over Current Protection Over Voltage Protection and Slew Rate Control The TCKE712BNL is 13.2 V high input voltage Single Inputs Single Output eFuse IC. It can be used as a reusable fuse, and other protection features like adjustable over current limit by an external resistor, short circuit protection, adjustable slew rate control by an external capacitance, adjustable over voltage protection, under voltage protection, thermal shutdown and FLAG function. Switch ON resistance is only 53 m, Wide input voltage operation characteristics makes this product ideal for power management such as in the Power Stage of Hard disk drive and Battery Charge applications. This device is available in 0.5 mm pitch ultra small package WSON10 (3.0 mm x 3.0 mm, t: 0.7 mm (typ)) .Thus this device is ideal for various WSON10 application such as portable applications that require high-density board. Weight : 19.7 mg ( typ.) Feature High input voltage: V = 13.2 V IN max Low ON resistance : R = 53 m (typ.) ON Adjustable over current protection Adjustable over voltage protection Programmable Slew rate control by External Capacitance for Inrush current reduction FLAG indicates Reverse current blocking (SW OFF state) Thermal Shutdown Small package:WSON10 (3.0 mm x 3.0 mm, t: 0.7 mm (typ)) Start of commercial production 2020-11 2020 2020-12-14 1 Toshiba Electronic Devices & Storage Corporation TCKE712BNL Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 18 V IN ILIM voltage V -0.3 to 6 V ILIM dV/dT voltage V -0.3 to 6 V dV/dT OVP voltage V -0.3 to 6 V OVP Control voltage V -0.3 to 18 V EN Output voltage V -0.3 to 18 V OUT FLAG voltage V -0.3 to 18 V FLAG FLAG Sink current I 0 to 1 mA SINK FLAG P 2.4 (Note 1) W Power dissipation D Junction temperature Tj 150 C Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board: FR4 board. (76.2 mm 114.3 mm 1.6 mm, 4 layer ) Operating Ranges Characteristics Symbol Ranges Unit Input voltage VIN 4.4 to 13.2 V 4.4 V VIN 5.5 V 1.7 to 12 ILIM External resistance R 5.5 V < VIN 9.9 V 2.4 to 12 k ILIM 9.9 V < VIN 13.2 V 3.1 to 12 Control voltage V 0 to 18 V EN FLAG Voltage V 0 to 18 V FLAG FLAG Sink current I 0 to 1 mA SINK FLAG Operating Ambient Ta 40 to 85 C opr temperature range External capacitance C 1000(max) nF dV/dT 2020 2020-12-14 2 Toshiba Electronic Devices & Storage Corporation