TLP251 TOSHIBA Photocoupler IRED & Photo-IC TLP251 Inverter For Air Conditioner Unit: mm Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive The TOSHIBA TLP251 consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of direct gate drive of lower power IGBTs. ( to 15A) Input threshold current: I =5mA(max.) F Supply current (I ): 11mA(max.) CC Supply voltage (V ): 10 35V CC TOSHIBA 1110C4S Output current (I ): 0.4A(max.) O Weight: 0.54 g (typ.) Switching time (t / t ): 1 s(max.) pLH pHL Isolation voltage: 2500Vrms(min.) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A Pin Configuration (top view) File No.E67349 VDE-Approved: EN 60747-5-5 (Note 1) 1 8 2 7 Note 1:When a VDE approved type is needed, 3 6 please designate the Option(D4). 4 5 Truth Table 1 : N.C. 5 : GND 2 : Anode 6 : V (Output) O Tr1 Tr2 3 : Cathode 7 : N.C. 4 : N.C. 8 : V CC Input On On Off LED Off Off On I CC Schematic V CC 8 I F (T 1) r 2 V F 6 3 V O I O (T 2) r GND 5 A 0.1F bypass capcitor must be connect ed Start of commercial production between pin 8 and 5(see Note 5). 1992-01 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP251 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 70C) I / Ta 0.36 mA / C F Peak transient forward current (Note 1) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation PD 40 mW Diode power dissipation derating (Ta70 C) PD/C -0.72 mW/C Junction temperature T 125 C j H peak output current I 0.4 A OPH (P 2.0s, f 15kHz) (Note 2) W L peak output current I 0.4 A OPL (P 2.0s, f 15kHz) (Note 2) W (Ta 70C) 35 Output voltage V V O (Ta = 85C) 24 (Ta 70C) 35 Supply voltage V V CC (Ta = 85C) 24 Output voltage derating V / Ta 0.73 V / C O (Ta 70C) Supply voltage derating V / Ta 0.73 V / C CC (Ta 70C) Output Power dissipation P 800 mW O Output Power dissipation derating (Ta 70C ) P / C -14.5 mW/C O Junction temperature T 125 C j Operating frequency (Note 3) f 25 kHz Operating temperature range T 20 to 85 C opr Storage temperature range T 55 to 125 C stg Lead soldering temperature(10 s) T 260 C sol Isolation voltage (AC, 60 s.,R.H. 60 %) (Note 4) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width P 1 s, 300 pps W Note 2: Expornential waveform Note 3: Expornential waveform, I 0.25 A( 2.0 s), I +0.25 A(2.0 s) OPH OPL Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED