TLP2530,TLP2531 TOSHIBA Photocoupler IRED & Photo IC TLP2530, TLP2531 Digital Logic Isolation Unit: mm Line Receiver Power Supply Control Switching Power Supply Industrial Inverter The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a pair of infrared emitting diode and integrated photodetector. This unit is 8-lead DIP. Separate connection for the photodiode bias and output transistor collectors improve the speed up to a hundred times that of a conventional phototransistor coupler by reducing the base-collector capacitance. TTL compatible Switching speed: tpHL = 0.2 s, tpLH = 0.3 s (typ.) ( RL = 1.9 k) Guaranteed performance over temp: 0C to 70C Isolation voltage: 2500 Vrms (min) TOSHIBA 11-10C4S UL-recognized: UL1577, File No.E67349 Weight: 0.54 g (typ.) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Pin Configuration (top view) 1 8 2 7 Schematic 3 6 I CC I F1 V CC 5 4 8 I O1 + 1 V F1 V 1. : Anode.1 O1 7 2. : Cathode.1 2 3. : Cathode.2 I F2 I O2 4. : Anode.2 + 5. : Gnd V O2 GND 4 V F2 6. : V (output 2) 6 O2 GND 7. : V (output 1) O1 3 5 8. : V CC Start of commercial production 1986-03 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP2530,TLP2531 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (each channel) I 25 mA F Forward current derating (each channel) (Ta> 70 C) IF/Ta -0.8 mA / C Pulse forward current (each channel) (Note 1) I 50 mA FP Pulse forward current derating (each channel) (Ta> 70 C) IFP/Ta -1.6 mA / C Total pulse forward current (each channel) (Note 2) I 1 A FPT Reverse voltage (each channel) V 5 V R Diode power dissipation (each channel) P 45 mW D mW Diode power dissipation derating (each channel) (Ta> 70 C) PD/Ta -0.8 / C Output current(each channel) I 8 mA O Peak output current (each channel) I 16 mA OP Output voltage(each channel) V -0.5 to 15 V O Supply voltage V -0.5 to 15 V CC Output power dissipation (each channel) P 35 mW O mW Output power dissipation derating (each channel) (Ta> 70 C) Po/Ta -0.6 / C Operating temperature range T -55 to 100 C opr Storage temperature range T -55 to 125 C stg Lead solder temperature(10 s) (Note 3) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 4) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 50 % duty cycle, 1 ms pulse width. Note 2: Pulse width 1 s, 300 pps. Note 3: 2 mm below seating plane. Note 4: Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 0 12 V CC Forward current (each channel) I 16 25 mA F Operating temperature T -25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED