TLP558 TOSHIBA Photocoupler IRED & Photo IC TLP558 Isolated Bus Driver Unit: mm High Speed Line Receiver Microprocessor System Interfaces MOS FET Gate Driver Transistor Inverter The TOSHIBA TLP558 consists of an infrared emitting diode and integrated high gain, high speed photodetector. This unit is 8-lead DIP package. The detector has a three state output stage that provides source drive and sink drive, and built-in schmitt trigger. The detector IC has an internal shield that provides a guaranteed common mode transient immunity of 1000V / s. TLP558 is inverter logic type. For buffer logic type, TLP555 is in line-up. Input current: IF=1.6 mA (max) Power supply voltage: VCC=4.5 to 20 V Switching speed: tpHL, tpLH=400ns (max) Common mode transient immunity: 1000V/s (min) TOSHIBA 11-10C4S Guaranteed performance over temperature: -25 to 85C Weight: 0.54 g (typ.) Isolation voltage: 2500Vrms (min) UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 1 : NC 8 V 1 CC 2 : Anode 3 : Cathode 2 7 Truth Table 4 : NC 5 : GND 6 3 Input Enable Output 6 : V (Output) O GND 5 7 : V (Enable) 4 E H H L Shield 8 : V CC L H H H L Z Schematic L L Z I E V E A 0.1F bypass capacitor must be connected between pins 7 I CC 8 and 5. V CC 8 I F I O + 2 V O V F 6 3 GND Shield 5 Start of commercial production 1987-05 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP558 Absolute Maximum Ratings Charactersitic Symbol Rating Unit Forward current I 10 mA F Peak transient forward current (Note 1) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation P 45 mW D Output current I 40 / -25 mA O Peak output current (Note 2) I 80 / -50 mA OP Output voltage V -0.5 to 20 V O Supply voltage V -0.5 to 20 V CC Three state enabel voltage V -0.5 to 20 V E Output power dissipation P 100 mW O Output power dissipation derating (Ta > 70 C) PO/Ta -1.8 mW/C Total package power dissipation P 200 mW T Total package power dissipation derating (Ta > 70 C) PT/Ta -3.6 mW/C Operating temperature range T -40 to 85 C opr Storage temperature range T -55 to 125 C stg Lead solder temperature(10 s) (Note 3) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %, Ta=25C) (Note 4) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 1 s, 300 pps. Note 2: Pulse width 5 s, duty ratio 0.025. Note 3: 1.6 mm below seating plane. Note 4: Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, on I 2 (Note 1) 5 mA F(ON) Input voltage, off V 0 0.8 V F(OFF) Supply voltage V 4.5 20 V CC Enable voltage high V 2.0 20 V EH Enable voltage low V 0 0.8 V EL Fan out(TTL load) N 4 Operating temperature T -25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: 2 mA condition permits at least 20 % CTR degradation guardband. Initial switching threshold is 1.6 mA or less. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED