TLP559(F) Toshiba

TLP559 TOSHIBA Photocoupler IRED & Photo IC TLP559 Digital Logic Ground Isolation Unit: mm Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Transistor Inverter The TOSHIBA TLP559 consists of a high output infrared emitting diode and a high speed detector of one chip photo diode transistor. This unit is 8 lead DIP package. TLP559 has no internal base connection, and a Faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. So this is suitable for application in noisy environmental condition. Isolation voltage: 2500 Vrms (min) Switching speed: t = 0.2 s (typ.) pHL t = 0.3 s (typ.) (R = 1.9k) TOSHIBA 11 10C4S pLH L Weight: 0.54 g (typ.) TTL compatible UL-recognized: UL 1577, File No.E67349. cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349. Pin Configuration (top view) Schematic I CC 8 1 : N.C. 1 V CC 2 : Anode I F 8 2 3 : Cathode 2 7 I O 4 : N.C. V F V O 3 5 : Emitter 6 3 6 GND 6 : Collector 5 Shield 5 7 : N.C. 4 Shield 8 : V CC Start of commercial production 1987-09 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP559 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current (Note 1) I 25 mA F Pulse forward current (Note 2) I 50 mA FP Peak transient forward current (Note 3) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation (Note 4) P 45 mW D Output current I 8 mA O Peak output current I 16 mA OP Output voltage V 0.5 to 15 V O Supply voltage V 0.5 to 15 V CC Output power dissipation (Note 5) P 100 mW O Operating temperature range T 55 to 100 C opr Storage temperature range T 55 to 125 C stg Lead solder temperature (10 s) (Note 6) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 7) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Derate 0.8mA above 70 C. (Note 2) 50 % duty cycle,1 ms pulse width.Derate 1.6 mA / C above 70 C. (Note 3) Pulse width 1 s, 300 pps. (Note 4) Derate 0.9 mW / C above 70 C. (Note 5) Derate 2 mW / C above 70 C. (Note 6) Soldering portion of lead: up to 2 mm from body of the devise. (Note 7) Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED