TLP590B TOSHIBA Photocoupler GaAAs Ired & PhotoDiode Array TLP590B Telecommunications Unit: mm Programmable Controllers MOS Gate Drivers MOSFET Gate Drivers The TOSHIBA TLP590B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a series-connected photo diode array in a six-lead plastic DIP package. The TLP590B is suitable for MOSFET gate drivers. UL recognized: UL1577, file No. E67349 Short Current Short Current Type Classification Classification Name Marking (min) I F C20 20 A 20 TLP590B 10 mA Standard 12 A 20, blank TOSHIBA 117A9 Note: When applying for a safety standard approval, Weight: 0.39 g (typ.) use the type name of the standard device. TLP590B(C20): TLP590B Pin Configuration (Top View) 6 1 2 3 4 1: Anode(LED) 2: Cathode(LED) 3: NC 4: Cathode 6: Anode Start of commercial production 1989/02 1 2014-09-01 TLP590B Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating I / C 0.5 mA / C F (Ta 25C) Pulse forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 3 V R Junction temperature T 125 C j Forward current I 50 A FD Reverse voltage V 10 V RD Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature T 260 C sol (10 second) Isolation voltage BV 2500 Vrms S (AC, 1 minute, R.H. 60%) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol MinTyp.MaxUnit Forward current I 20 25 mA F Operating temperature T 25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. MaxUnit Forward voltage V I = 10 mA 1.2 1.4 1.7 V F F Reverse current I V = 3 V 10 A R R Capacitance C V = 0V, f = 1 MHz 30 60 pF T Forward voltage V I = 10 A 7 V FD FD Reverse current I V = 10 V 1 nA RD RD 2 2014-09-01 Detector LED Detector LED