X-On Electronics has gained recognition as a prominent supplier of D882SSG-P-AE3-R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. D882SSG-P-AE3-R Bipolar Transistors - BJT are a product manufactured by Unisonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

D882SSG-P-AE3-R Unisonic

Name: D882SSG-P-AE3-R
Brand: Unisonic
SKU: D882SSGPAE3R_Unisonic
Availability: OutOfStock
Rating: 5 (11 reviews)

D882SSG-P-AE3-R electronic component of Unisonic

D882SSG-P-AE3-R Bipolar Transistors - BJT

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See Product Specifications

Part No.	D882SSG-P-AE3-R
Manufacturer:	Unisonic
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 3A 30V SOT-23 (SOT-23-3) RoHS
Datasheet:	D882SSG-P-AE3-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.0914 ea
Line Total: USD 0.46

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

D882SSG-P-AE3-R More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 17 Apr to Tue. 22 Apr MOQ : 5 Multiples : 5	5 : USD 0.0914 50 : USD 0.0794 150 : USD 0.0735 500 : USD 0.0591 3000 : USD 0.0503 6000 : USD 0.049

Specifications

Manufacturer Unisonic Unisonic
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Unisonic Unisonic
Transistor Type npn npn
Current - Collector Ic Max 3 A 3 A
Voltage - Collector Emitter Breakdown Max 30 V 30 V
Power - Max 350 mW 350 mW
Collector Cut-Off Current Icbo 1 uA 1 uA
Collector-Emitter Breakdown Voltage Vceo 30 V 30 V
Power Dissipation Pd 10 W 10 W
Collector Current Ic 3 A 3 A
Dc Current Gain Hfe@Ic Vce 160@1 A , 2V 160@1 A , 2V
Transition Frequency Ft 80MHz 80MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 300 mV @2A , 200 mA 300 mV @2A , 200 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the D882SSG-P-AE3-R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D882SSG-P-AE3-R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The D882SSG-P-AE3-R is a NPN Bipolar Transistor manufactured by Unisonic Technologies. It has a SOT-23-3 package and is RoHS compliant. It has a current gain of hFE between 110 - 400 and can sink or source a current of up to 3 Amps and can withstand a maximum Collector-Emitter voltage of 30V. This transistor is used in applications that require both low noise operation and high current switching. It is suitable for switching, amplifier, voltage regulator, and bridge driver applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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