X-On Electronics has gained recognition as a prominent supplier of HE8550G-D-AB3-R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. HE8550G-D-AB3-R Bipolar Transistors - BJT are a product manufactured by Unisonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

HE8550G-D-AB3-R Unisonic

Name: HE8550G-D-AB3-R
Brand: Unisonic
SKU: HE8550GDAB3R_Unisonic
Availability: OutOfStock
Rating: 5 (11 reviews)

HE8550G-D-AB3-R electronic component of Unisonic

HE8550G-D-AB3-R Bipolar Transistors - BJT

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See Product Specifications

Part No.	HE8550G-D-AB3-R
Manufacturer:	Unisonic
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 1.5A 25V SOT-89 (SOT-89-3) RoHS
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0482 ea
Line Total: USD 0.48

Availability - 0

MOQ: 10 Multiples: 10
Pack Size: 10

HE8550G-D-AB3-R More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 10 Multiples : 10	10 : USD 0.0482 100 : USD 0.0473 300 : USD 0.0464 1000 : USD 0.0459

Specifications

Manufacturer Unisonic Unisonic
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 89 (SOT - 89 - 3) SOT - 89 (SOT - 89 - 3)
Brand Category Unisonic Unisonic
Transistor Type pnp pnp
Current - Collector Ic Max 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown Max 25 V 25 V
Power - Max 500 mW 500 mW
Collector Cut-Off Current Icbo 100 nA 100 nA
Collector-Emitter Breakdown Voltage Vceo 25 V 25 V
Power Dissipation Pd 500 mW 500 mW
Collector Current Ic 1.5 A 1.5 A
Dc Current Gain Hfe@Ic Vce 160@100 mA , 1V 160@100 mA , 1V
Transition Frequency Ft 190MHz 190MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 280 mV @800 mA , 80 mA 280 mV @800 mA , 80 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the HE8550G-D-AB3-R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HE8550G-D-AB3-R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The HE8550G-D-AB3-R is a PNP Transistor manufactured by Unisonic for general purpose switching and amplification applications. It is housed in a SOT-89-3 package with leads 3 beige and rated for 1.5A of current and a maximum voltage of 25V. The lead-free, RoHS compliant device is suitable for all types of electronics applications. A collector-base breakdown voltage of 90V and a collector-emitter breakdown voltage of 50V lend it extra versatility. The device also has the ability to withstand up to 2us peak pulse current.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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