X-On Electronics has gained recognition as a prominent supplier of MJE13001G-C-AB3-F-R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJE13001G-C-AB3-F-R Bipolar Transistors - BJT are a product manufactured by Unisonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MJE13001G-C-AB3-F-R Unisonic

Name: MJE13001G-C-AB3-F-R
Brand: Unisonic
SKU: MJE13001GCAB3FR_Unisonic
Availability: OutOfStock
Rating: 5 (11 reviews)

MJE13001G-C-AB3-F-R electronic component of Unisonic

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See Product Specifications

Part No.	MJE13001G-C-AB3-F-R
Manufacturer:	Unisonic
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 200mA 400V SOT-89(SOT-89-3) RoHS
Datasheet:	MJE13001G-C-AB3-F-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

10: USD 0.0487 ea
Line Total: USD 0.49

Availability - 0

MOQ: 10 Multiples: 10
Pack Size: 10

MJE13001G-C-AB3-F-R More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 06 Jan to Thu. 09 Jan MOQ : 10 Multiples : 10	10 : USD 0.0487 100 : USD 0.0478 300 : USD 0.0473 1000 : USD 0.0464

Specifications

Manufacturer Unisonic Unisonic
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 89 (SOT - 89 - 3) SOT - 89 (SOT - 89 - 3)
Brand Category Unisonic Unisonic
Transistor Type NPN NPN
Current - Collector Ic Max 200 mA 200 mA
Voltage - Collector Emitter Breakdown Max 400 V 400 V
Power - Max 550 mW 550 mW
Collector Cut-Off Current Icbo 100 uA 100 uA
Collector-Emitter Breakdown Voltage Vceo 400 V 400 V
Power Dissipation Pd 550 mW 550 mW
Collector Current Ic 200 mA 200 mA
Dc Current Gain Hfe@Ic Vce 20@20 mA , 20V 20@20 mA , 20V
Transition Frequency Ft 8MHz 8MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 500 mV @50 mA , 10 mA 500 mV @50 mA , 10 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the MJE13001G-C-AB3-F-R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJE13001G-C-AB3-F-R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

TechnologiesThe MJE13001G-C-AB3-F-R is an NPN type transistor manufactured by Unisonic Technologies. It has a 200mA current rating and 400V breakdown voltage, and is housed in a SOT-89-3 package. It is RoHS compliant, meaning that it is free of hazardous substances and meets environmental protection requirements. The MJE13001G-C-AB3-F-R is typically used as a switch or amplifier in various electronics applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic Tech may also be referenced as

UTC(Unisonic Tech)

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