X-On Electronics has gained recognition as a prominent supplier of SI1967DH-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI1967DH-T1-GE3 MOSFET are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI1967DH-T1-GE3 VBsemi Elec

Name: SI1967DH-T1-GE3
Brand: VBsemi Elec
SKU: SI1967DHT1GE3_VBsemi Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

SI1967DH-T1-GE3 electronic component of VBsemi Elec

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Part No.	SI1967DH-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFET
Description:	20V 1.8A 155mO@4.5V,2.5A 1.4W 2 P-Channel SC-70-6 MOSFETs ROHS
Datasheet:	SI1967DH-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1643 ea
Line Total: USD 0.16

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SI1967DH-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 22 Jul to Thu. 25 Jul MOQ : 1 Multiples : 1	1 : USD 0.1643 10 : USD 0.1607 30 : USD 0.1581 100 : USD 0.1557

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SC70 - 6 SC70 - 6
Brand Category Vbsemi Elec Vbsemi Elec
Drain Source Voltage Vdss 20 V 20 V
Continuous Drain Current Id 1.8 A 1.8 A
Drain Source On Resistance Rdson@Vgs Id 155 mOhms @4.5V , 2.5A 155 mOhms @4.5V , 2.5A
Power Dissipation Pd 1.4 W 1.4 W
Gate Threshold Voltage Vgsth@Id 1.5 V @250uA 1.5 V @250uA
Reverse Transfer Capacitance Crss@Vds 33 pF @15V 33 pF @15V
Type 2 P - Channel 2 P - Channel
Input Capacitance Ciss@Vds 210 pF @15V 210 pF @15V
Total Gate Charge Qg@Vgs 2.7 nC @4.5V 2.7 nC @4.5V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

SI1967DH-T1-GE3 Alternative Parts

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We are delighted to provide the SI1967DH-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1967DH-T1-GE3 and other electronic components in the MOSFET category and beyond.

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Additional Infomation About Product

.The SI1967DH-T1-GE3 is a 20V 1.8A 155mO@4.5V,2.5A 1.4W 2 P-Channel SC-70-6 MOSFETs ROHS manufactured by VBsemi Elec. It is a small surface-mountable package device designed for use in electronic switching applications. It has two P-channel MOSFETs that are used to amplify or switch digital signals. The device is constructed using an SC-70-6 package for small size and low power consumption. It is RoHS compliant and suitable for a wide range of temperature ranges. The maximum drain exposed pad voltage is 20V and maximum drain current is 1.8A, while the maximum drain-source ON-resistance is 155mO at 4.5V and 2.5A. The power rating is 1.4W at the maximum rated power.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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