BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 2 Radiant sensitive area (in mm ): 0.78 Leads with stand-off High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters 16140-1 High bandwidth: > 100 MHz at V = 12 V R Fast response times Angle of half sensitivity: = 20 Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 BPV10NF is a PIN photodiode with high speed and high radiant sensitivity in black, T-1 plastic package with APPLICATIONS daylight blocking filter. Filter bandwidth is matched with High speed detector for infrared radiation 870 nm to 950 nm IR emitters. Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV10NF 60 20 790 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV10NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 BPV10NF-CS21 Reel MOQ: 5000 pcs, 1000 pcs/reel T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from body T 260 C sd 2 Thermal resistance junction / ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.9, 29-May-15 Document Number: 81503 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV10NF www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1.0 1.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 20 V, E = 0 I 15 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 11 pF R D 2 Open circuit voltage E = 1 mW/cm , = 870 nm V 450 mV e O 2 Short circuit current E = 1 mW/cm , = 870 nm I 50 A e K 2 E = 1 mW/cm , = 870 nm, V = 5 V I 55 A e R ra Reverse light current 2 E = 1 mW/cm , = 950 nm, V = 5 V I 30 60 A e R ra 2 Temperature coefficient of I E = 1 mW/cm , = 870 nm, V = 5 V TK -0.1 %/K ra e R Ira Absolute spectral sensitivity V = 5 V, = 870 nm s()0.55 A/W R Angle of half sensitivity 20 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 Quantum efficiency = 950 nm 70 % -14 Noise equivalent power V = 20 V, = 950 nm NEP 3 x 10 W/ Hz R 12 Detectivity V = 20 V, = 950 nm D* 3 x 10 cm Hz/W R Rise time V = 50 V, R = 50 , = 820 nm t 2.5 ns R L r Fall time V = 50 V, R = 50 , = 820 nm t 2.5 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 1.2 100 1.0 10 V = 5 V 0.8 R 2 E =1 mW/cm e = 870 nm V = 20 V R 1 0.6 100 100 20 40 60 80 0 204060 80 94 8436 T - Ambient Temperature (C) 94 8621 T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.9, 29-May-15 Document Number: 81503 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel