X-On Electronics has gained recognition as a prominent supplier of BPV10NF Photodiodes across the USA, India, Europe, Australia, and various other global locations. BPV10NF Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BPV10NF Vishay

Hot BPV10NF electronic component of Vishay
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See Product Specifications
Part No.BPV10NF
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes T-1.75 790 to 1050nm +/-20 deg
Datasheet: BPV10NF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4804 ea
Line Total: USD 0.48 
Availability - 3706
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10853
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8448
10 : USD 0.5679
100 : USD 0.5018
500 : USD 0.4865
1000 : USD 0.4581
4000 : USD 0.3996
8000 : USD 0.3965
12000 : USD 0.3925
28000 : USD 0.3919

1
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.4288
10 : USD 0.9091
25 : USD 0.8051
50 : USD 0.7011
100 : USD 0.5971
500 : USD 0.5807

3837
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 79
Multiples : 1
79 : USD 0.4095
100 : USD 0.4095
250 : USD 0.4095
500 : USD 0.4095
1500 : USD 0.4095

3706
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4804
10 : USD 0.3844
30 : USD 0.3429
100 : USD 0.292
500 : USD 0.2676
1000 : USD 0.2543

4103
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.023
10 : USD 0.6721
100 : USD 0.4642
500 : USD 0.4411
1000 : USD 0.3828
4000 : USD 0.3575
8000 : USD 0.3542
24000 : USD 0.3542
48000 : USD 0.3421

2146
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.56
10 : USD 0.4354
50 : USD 0.3654
60 : USD 0.2856
100 : USD 0.2842

129
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 87
Multiples : 1
87 : USD 0.4695
100 : USD 0.468

43521
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 35
Multiples : 1
35 : USD 0.7287
100 : USD 0.553
500 : USD 0.532
1000 : USD 0.4524
4000 : USD 0.4248
8000 : USD 0.4013
12000 : USD 0.3973
28000 : USD 0.3934

3880
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.7001

10853
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 20
Multiples : 1
20 : USD 0.727
100 : USD 0.5489
500 : USD 0.5277
1000 : USD 0.4476
4000 : USD 0.42
8000 : USD 0.3965
12000 : USD 0.3926
28000 : USD 0.3919

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Packaging
Width
Brand
Cnhts
Hts Code
If - Forward Current
Mxhts
Noise Equivalent Power - Nep
Pd - Power Dissipation
Photocurrent
Product Type
Responsivity
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BPV10NF from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BPV10NF and other electronic components in the Photodiodes category and beyond.

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BPV10NF www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 2 Radiant sensitive area (in mm ): 0.78 Leads with stand-off High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters 16140-1 High bandwidth: > 100 MHz at V = 12 V R Fast response times Angle of half sensitivity: = 20 Material categorization: for definitions of compliance DESCRIPTION please see www.vishay.com/doc 99912 BPV10NF is a PIN photodiode with high speed and high radiant sensitivity in black, T-1 plastic package with APPLICATIONS daylight blocking filter. Filter bandwidth is matched with High speed detector for infrared radiation 870 nm to 950 nm IR emitters. Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 BPV10NF 60 20 790 to 1050 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPV10NF Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 BPV10NF-CS21 Reel MOQ: 5000 pcs, 1000 pcs/reel T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from body T 260 C sd 2 Thermal resistance junction / ambient Connected with Cu wire, 0.14 mm R 350 K/W thJA Rev. 1.9, 29-May-15 Document Number: 81503 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BPV10NF www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 1.0 1.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 20 V, E = 0 I 15 nA R ro Diode capacitance V = 0 V, f = 1 MHz, E = 0 C 11 pF R D 2 Open circuit voltage E = 1 mW/cm , = 870 nm V 450 mV e O 2 Short circuit current E = 1 mW/cm , = 870 nm I 50 A e K 2 E = 1 mW/cm , = 870 nm, V = 5 V I 55 A e R ra Reverse light current 2 E = 1 mW/cm , = 950 nm, V = 5 V I 30 60 A e R ra 2 Temperature coefficient of I E = 1 mW/cm , = 870 nm, V = 5 V TK -0.1 %/K ra e R Ira Absolute spectral sensitivity V = 5 V, = 870 nm s()0.55 A/W R Angle of half sensitivity 20 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 Quantum efficiency = 950 nm 70 % -14 Noise equivalent power V = 20 V, = 950 nm NEP 3 x 10 W/ Hz R 12 Detectivity V = 20 V, = 950 nm D* 3 x 10 cm Hz/W R Rise time V = 50 V, R = 50 , = 820 nm t 2.5 ns R L r Fall time V = 50 V, R = 50 , = 820 nm t 2.5 ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 1.2 100 1.0 10 V = 5 V 0.8 R 2 E =1 mW/cm e = 870 nm V = 20 V R 1 0.6 100 100 20 40 60 80 0 204060 80 94 8436 T - Ambient Temperature (C) 94 8621 T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.9, 29-May-15 Document Number: 81503 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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